Investigations of impurity gettering in multicrystalline silicon

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2001
• Hauptverfasser: Evtukh, A.A., Litovchenko, V.G., Oberemok, A.S., Popov, V.G., Rassamakin, Yu.V., Romanyuk, B.N., Volkov, S.G.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2001
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/119322
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Investigations of impurity gettering in multicrystalline silicon / A.A. Evtukh, V.G. Litovchenko, A.S. Oberemok, V.G. Popov, Yu. V. Rassamakin, B.N. Romanyuk, S.G. Volkov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 278-282. — Бібліогр.: 13 назв. — англ.

The processes of gettering the recombination-active impurities in multicrystalline silicon were investigated using methods of mass spectrometry of neutral atoms with the depth profile analysis and spectroscopy of a surface photovoltage (permitting to determine the diffusion length of non-equilibrium...