Investigations of impurity gettering in multicrystalline silicon
The processes of gettering the recombination-active impurities in multicrystalline silicon were investigated using methods of mass spectrometry of neutral atoms with the depth profile analysis and spectroscopy of a surface photovoltage (permitting to determine the diffusion length of non-equilibrium...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2001 |
| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2001
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/119322 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Investigations of impurity gettering in multicrystalline silicon / A.A. Evtukh, V.G. Litovchenko, A.S. Oberemok, V.G. Popov, Yu. V. Rassamakin, B.N. Romanyuk, S.G. Volkov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 278-282. — Бібліогр.: 13 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862625517468909568 |
|---|---|
| author | Evtukh, A.A. Litovchenko, V.G. Oberemok, A.S. Popov, V.G. Rassamakin, Yu.V. Romanyuk, B.N. Volkov, S.G. |
| author_facet | Evtukh, A.A. Litovchenko, V.G. Oberemok, A.S. Popov, V.G. Rassamakin, Yu.V. Romanyuk, B.N. Volkov, S.G. |
| citation_txt | Investigations of impurity gettering in multicrystalline silicon / A.A. Evtukh, V.G. Litovchenko, A.S. Oberemok, V.G. Popov, Yu. V. Rassamakin, B.N. Romanyuk, S.G. Volkov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 278-282. — Бібліогр.: 13 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The processes of gettering the recombination-active impurities in multicrystalline silicon were investigated using methods of mass spectrometry of neutral atoms with the depth profile analysis and spectroscopy of a surface photovoltage (permitting to determine the diffusion length of non-equilibrium charge carriers). Getters formed by a silicon layer with a developed internal surface, and also combined getter (the mentioned layer covered with a thin film of aluminum) were used. It was shown that the efficiency of gettering depends on annealing temperature and character of Al depth distribution that, in turn, depends on the regimes of structurally modified silicon layer formation. The models of gettering that enabled us to explain obtained results are considered.
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| first_indexed | 2025-12-07T13:35:19Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-119322 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T13:35:19Z |
| publishDate | 2001 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Evtukh, A.A. Litovchenko, V.G. Oberemok, A.S. Popov, V.G. Rassamakin, Yu.V. Romanyuk, B.N. Volkov, S.G. 2017-06-06T12:37:03Z 2017-06-06T12:37:03Z 2001 Investigations of impurity gettering in multicrystalline silicon / A.A. Evtukh, V.G. Litovchenko, A.S. Oberemok, V.G. Popov, Yu. V. Rassamakin, B.N. Romanyuk, S.G. Volkov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 278-282. — Бібліогр.: 13 назв. — англ. 1560-8034 PACS: 84. 60. J https://nasplib.isofts.kiev.ua/handle/123456789/119322 The processes of gettering the recombination-active impurities in multicrystalline silicon were investigated using methods of mass spectrometry of neutral atoms with the depth profile analysis and spectroscopy of a surface photovoltage (permitting to determine the diffusion length of non-equilibrium charge carriers). Getters formed by a silicon layer with a developed internal surface, and also combined getter (the mentioned layer covered with a thin film of aluminum) were used. It was shown that the efficiency of gettering depends on annealing temperature and character of Al depth distribution that, in turn, depends on the regimes of structurally modified silicon layer formation. The models of gettering that enabled us to explain obtained results are considered. This work was partly supported by the STCU project #U-031. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Investigations of impurity gettering in multicrystalline silicon Article published earlier |
| spellingShingle | Investigations of impurity gettering in multicrystalline silicon Evtukh, A.A. Litovchenko, V.G. Oberemok, A.S. Popov, V.G. Rassamakin, Yu.V. Romanyuk, B.N. Volkov, S.G. |
| title | Investigations of impurity gettering in multicrystalline silicon |
| title_full | Investigations of impurity gettering in multicrystalline silicon |
| title_fullStr | Investigations of impurity gettering in multicrystalline silicon |
| title_full_unstemmed | Investigations of impurity gettering in multicrystalline silicon |
| title_short | Investigations of impurity gettering in multicrystalline silicon |
| title_sort | investigations of impurity gettering in multicrystalline silicon |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119322 |
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