Effect of temperature and pressure to pinning centers in bulk MgB₂ under high pressure
The MgB₂-based samples were synthesized at 2 GPa at 800 and 1050 °C for 1 hour with and without Ti and SiC. X-ray, SEM and Auger structural studies showed that with increasing of manufacturing temperature grain boundary pinning transforms into point pinning, which is well correlated with the transfo...
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| Опубліковано в: : | Физика низких температур |
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| Дата: | 2014 |
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| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2014
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| Теми: | |
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/119607 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Effect of temperature and pressure to pinning centers in bulk MgB₂ under high pressure / A. Kozyrev // Физика низких температур. — 2014. — Т. 40, № 8. — С. 964-967. — Бібліогр.: 10 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | The MgB₂-based samples were synthesized at 2 GPa at 800 and 1050 °C for 1 hour with and without Ti and SiC. X-ray, SEM and Auger structural studies showed that with increasing of manufacturing temperature grain boundary pinning transforms into point pinning, which is well correlated with the transformation of discontinuous oxygen enriched layers into separately located Mg–B–O inclusions in MgB₂. Ti and SiC additions can influence the oxygen and boron distribution, but cannot change the type of pinning at relatively low temperatures.
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| ISSN: | 0132-6414 |