Enhanced phenomenological models of ion channeling contribution to doping profiles in crystals

New phenomenological models are proposed to describe the effect of an ordered lattice structure of crystalline targets on the as-implanted doping profiles of low-energy heavy ions. The models account for the channeling kinetics and clarify the effect of bi-directional transitions of ions between r...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Condensed Matter Physics
Datum:2009
Hauptverfasser: Bratchenko, M.I., Dyuldya, S.V., Bakai, A.S.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики конденсованих систем НАН України 2009
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/119771
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Enhanced phenomenological models of ion channeling contribution to doping profiles in crystals / M.I. Bratchenko, S.V. Dyuldya, A.S. Bakai // Condensed Matter Physics. — 2009. — Т. 12, № 1. — С. 35-49. — Бібліогр.: 44 назв. — англ.

Institution

Digital Library of Periodicals of National Academy of Sciences of Ukraine