Indium induced nanostructures on In₄Se₃(100) surface studied by scanning tunneling microscopy

• Veröffentlicht in: Functional Materials
• Datum: 2013
• Hauptverfasser: Galiy, P.V., Nenchuk, T.M., Ciszewski, A., Mazur, P., Zuber, S., Buzhuk, Ya.M.
• Format: Artikel
• Sprache: English
• Veröffentlicht: НТК «Інститут монокристалів» НАН України 2013
• Schlagworte: Characterization and properties
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/119784
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Indium induced nanostructures on In₄Se₃(100) surface studied by scanning tunneling microscopy / P.V. Galiy, T.M. Nenchuk, A. Ciszewski, P. Mazur, S. Zuber, Ya.M. Buzhuk // Functional Materials. — 2013. — Т. 20, № 1. — С. 37-43. — Бібліогр.: 17 назв. — англ.

Indium deposition leads to changes in the scanning tunneling microscopy (STM)-revealed (100) surface morphology of In₄Se₃ layered semiconductor with the formation of nanostructures, which are characterized by different dimensionality dependent on different crystal growth conditions. Preferable forma...