Indium induced nanostructures on In₄Se₃(100) surface studied by scanning tunneling microscopy

Indium induced nanostructures on In₄Se₃(100) surface studied by scanning tunneling microscopy

Indium deposition leads to changes in the scanning tunneling microscopy (STM)-revealed (100) surface morphology of In₄Se₃ layered semiconductor with the formation of nanostructures, which are characterized by different dimensionality dependent on different crystal growth conditions. Preferable forma...

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Published in:Functional Materials
Date:2013
Main Authors: Galiy, P.V., Nenchuk, T.M., Ciszewski, A., Mazur, P., Zuber, S., Buzhuk, Ya.M.
Format: Article
Language:English
Published: НТК «Інститут монокристалів» НАН України 2013
Subjects:
Characterization and properties
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/119784
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Indium induced nanostructures on In₄Se₃(100) surface studied by scanning tunneling microscopy / P.V. Galiy, T.M. Nenchuk, A. Ciszewski, P. Mazur, S. Zuber, Ya.M. Buzhuk // Functional Materials. — 2013. — Т. 20, № 1. — С. 37-43. — Бібліогр.: 17 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-119784
record_format dspace
spelling Galiy, P.V.
Nenchuk, T.M.
Ciszewski, A.
Mazur, P.
Zuber, S.
Buzhuk, Ya.M.
2017-06-09T14:02:51Z
2017-06-09T14:02:51Z
2013
Indium induced nanostructures on In₄Se₃(100) surface studied by scanning tunneling microscopy / P.V. Galiy, T.M. Nenchuk, A. Ciszewski, P. Mazur, S. Zuber, Ya.M. Buzhuk // Functional Materials. — 2013. — Т. 20, № 1. — С. 37-43. — Бібліогр.: 17 назв. — англ.
1027-5495
DOI: dx.doi.org/10.15407/fm20.01.037
https://nasplib.isofts.kiev.ua/handle/123456789/119784
Indium deposition leads to changes in the scanning tunneling microscopy (STM)-revealed (100) surface morphology of In₄Se₃ layered semiconductor with the formation of nanostructures, which are characterized by different dimensionality dependent on different crystal growth conditions. Preferable formation of nanodots in low and quasi one dimensional (1D) structures for the high bulk-conductivity crystals has been observed. The STM and scanning tunneling spectroscopy data enable us to consider that the dimensionality, shape and direction of the obtained indium deposition structures are induced by indium clusters available on the original, on-the-lattice-scale furrowed, ultra high vacuum (UHV) (100) cleavages of In₄Se₃ crystal due to the self-intercalation phenomenon.
en
НТК «Інститут монокристалів» НАН України
Functional Materials
Characterization and properties
Indium induced nanostructures on In₄Se₃(100) surface studied by scanning tunneling microscopy
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Indium induced nanostructures on In₄Se₃(100) surface studied by scanning tunneling microscopy
spellingShingle Indium induced nanostructures on In₄Se₃(100) surface studied by scanning tunneling microscopy
Galiy, P.V.
Nenchuk, T.M.
Ciszewski, A.
Mazur, P.
Zuber, S.
Buzhuk, Ya.M.
Characterization and properties
title_short Indium induced nanostructures on In₄Se₃(100) surface studied by scanning tunneling microscopy
title_full Indium induced nanostructures on In₄Se₃(100) surface studied by scanning tunneling microscopy
title_fullStr Indium induced nanostructures on In₄Se₃(100) surface studied by scanning tunneling microscopy
title_full_unstemmed Indium induced nanostructures on In₄Se₃(100) surface studied by scanning tunneling microscopy
title_sort indium induced nanostructures on in₄se₃(100) surface studied by scanning tunneling microscopy
author Galiy, P.V.
Nenchuk, T.M.
Ciszewski, A.
Mazur, P.
Zuber, S.
Buzhuk, Ya.M.
author_facet Galiy, P.V.
Nenchuk, T.M.
Ciszewski, A.
Mazur, P.
Zuber, S.
Buzhuk, Ya.M.
topic Characterization and properties
topic_facet Characterization and properties
publishDate 2013
language English
container_title Functional Materials
publisher НТК «Інститут монокристалів» НАН України
format Article
description Indium deposition leads to changes in the scanning tunneling microscopy (STM)-revealed (100) surface morphology of In₄Se₃ layered semiconductor with the formation of nanostructures, which are characterized by different dimensionality dependent on different crystal growth conditions. Preferable formation of nanodots in low and quasi one dimensional (1D) structures for the high bulk-conductivity crystals has been observed. The STM and scanning tunneling spectroscopy data enable us to consider that the dimensionality, shape and direction of the obtained indium deposition structures are induced by indium clusters available on the original, on-the-lattice-scale furrowed, ultra high vacuum (UHV) (100) cleavages of In₄Se₃ crystal due to the self-intercalation phenomenon.
issn 1027-5495
url https://nasplib.isofts.kiev.ua/handle/123456789/119784
citation_txt Indium induced nanostructures on In₄Se₃(100) surface studied by scanning tunneling microscopy / P.V. Galiy, T.M. Nenchuk, A. Ciszewski, P. Mazur, S. Zuber, Ya.M. Buzhuk // Functional Materials. — 2013. — Т. 20, № 1. — С. 37-43. — Бібліогр.: 17 назв. — англ.
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AT nenchuktm indiuminducednanostructuresonin4se3100surfacestudiedbyscanningtunnelingmicroscopy
AT ciszewskia indiuminducednanostructuresonin4se3100surfacestudiedbyscanningtunnelingmicroscopy
AT mazurp indiuminducednanostructuresonin4se3100surfacestudiedbyscanningtunnelingmicroscopy
AT zubers indiuminducednanostructuresonin4se3100surfacestudiedbyscanningtunnelingmicroscopy
AT buzhukyam indiuminducednanostructuresonin4se3100surfacestudiedbyscanningtunnelingmicroscopy
first_indexed 2025-12-07T16:42:44Z
last_indexed 2025-12-07T16:42:44Z
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