Relaxation of photodarkening in SiO-As₂(S,Se)₃ composite layers
Investigated in this work is the reversible photostimulated red absorption edge shift (photodarkening), ∆Eg, of As₂(S,Se)₃ nanoparticles embedded into the SiO matrix. As compared to continuous chalcogenide films, the remarkable ∆Eg increase (up to 4 times) with decreasing of chalcogenide particle si...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 1999 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/119861 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Relaxation of photodarkening in SiO-As₂(S,Se)₃ composite layers / I.Z. Indutnyi, P.E. Shepeliavyi, V.I. Indutnyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 59-62. — Бібліогр.: 11 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862589146907803648 |
|---|---|
| author | Indutnyi, I.Z. Shepeliavyi, P.E. Indutnyi, V.I. |
| author_facet | Indutnyi, I.Z. Shepeliavyi, P.E. Indutnyi, V.I. |
| citation_txt | Relaxation of photodarkening in SiO-As₂(S,Se)₃ composite layers / I.Z. Indutnyi, P.E. Shepeliavyi, V.I. Indutnyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 59-62. — Бібліогр.: 11 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Investigated in this work is the reversible photostimulated red absorption edge shift (photodarkening), ∆Eg, of As₂(S,Se)₃ nanoparticles embedded into the SiO matrix. As compared to continuous chalcogenide films, the remarkable ∆Eg increase (up to 4 times) with decreasing of chalcogenide particle sizes in composite SiO-As₂(S,Se)₃ layers was revealed. The exponential dependence of ∆Eg on storing time at different temperatures has been obtained. An activation energy of the transition of A₂2S₃ nanoparticles structure from a metastable photoexposed state to a ground annealed state is equal to 0.78 ± 0.06 eV. The effects are related to a spatial confinement of a photoexcited carrier diffusion length and an influence of particle sizes on intermediate-range order scale structure relaxation in the chalcogenide nanoparticles.
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| first_indexed | 2025-11-27T02:19:32Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-119861 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-27T02:19:32Z |
| publishDate | 1999 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Indutnyi, I.Z. Shepeliavyi, P.E. Indutnyi, V.I. 2017-06-10T07:46:21Z 2017-06-10T07:46:21Z 1999 Relaxation of photodarkening in SiO-As₂(S,Se)₃ composite layers / I.Z. Indutnyi, P.E. Shepeliavyi, V.I. Indutnyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 59-62. — Бібліогр.: 11 назв. — англ. 1560-8034 PACS 78.66J,F, 81.15, 78.40.P, 73.61.J, 73.50.M https://nasplib.isofts.kiev.ua/handle/123456789/119861 Investigated in this work is the reversible photostimulated red absorption edge shift (photodarkening), ∆Eg, of As₂(S,Se)₃ nanoparticles embedded into the SiO matrix. As compared to continuous chalcogenide films, the remarkable ∆Eg increase (up to 4 times) with decreasing of chalcogenide particle sizes in composite SiO-As₂(S,Se)₃ layers was revealed. The exponential dependence of ∆Eg on storing time at different temperatures has been obtained. An activation energy of the transition of A₂2S₃ nanoparticles structure from a metastable photoexposed state to a ground annealed state is equal to 0.78 ± 0.06 eV. The effects are related to a spatial confinement of a photoexcited carrier diffusion length and an influence of particle sizes on intermediate-range order scale structure relaxation in the chalcogenide nanoparticles. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Relaxation of photodarkening in SiO-As₂(S,Se)₃ composite layers Article published earlier |
| spellingShingle | Relaxation of photodarkening in SiO-As₂(S,Se)₃ composite layers Indutnyi, I.Z. Shepeliavyi, P.E. Indutnyi, V.I. |
| title | Relaxation of photodarkening in SiO-As₂(S,Se)₃ composite layers |
| title_full | Relaxation of photodarkening in SiO-As₂(S,Se)₃ composite layers |
| title_fullStr | Relaxation of photodarkening in SiO-As₂(S,Se)₃ composite layers |
| title_full_unstemmed | Relaxation of photodarkening in SiO-As₂(S,Se)₃ composite layers |
| title_short | Relaxation of photodarkening in SiO-As₂(S,Se)₃ composite layers |
| title_sort | relaxation of photodarkening in sio-as₂(s,se)₃ composite layers |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119861 |
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