Review of a monographs
In their monograph the authors have systematized and generalized the results of numerous theoretical, as well as experimental, investigations of interactions between phases at the metal−InP (GaAs) interfaces and degradation mechanisms in indium phosphide and gallium arsenide Schottky barrier device...
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| Date: | 1999 |
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| Main Author: | |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Subjects: | |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/119878 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Review of a monographs / K.D. Glinchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 3. — С. 111. назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Summary: | In their monograph the authors have systematized and generalized the results of numerous theoretical, as well as experimental, investigations of interactions between phases at the metal−InP (GaAs) interfaces and degradation mechanisms in indium phosphide and gallium arsenide Schottky barrier device structures. For barrier contacts with a transition layer the aging mechanisms and role of mass transport in them are discussed. The physico-chemical peculiarities of the metal−InP (GaAs) interface formation, as well as feasibility of prediction of interactions between phases, are considered. |
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