Energy spectrum of transition metal impurity in a semiconductor with an ideal surface

• Published in: Condensed Matter Physics
• Date: 1999
• Main Authors: Melnychuk, S.V., Yurijchuk, I.M.
• Format: Article
• Language: English
• Published: Інститут фізики конденсованих систем НАН України 1999
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/119918
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Energy spectrum of transition metal impurity in a semiconductor with an ideal surface / S.V. Melnychuk, I.M. Yurijchuk // Condensed Matter Physics. — 1999. — Т. 2, № 1(17). — С. 133-142. — Бібліогр.: 15 назв. — англ.

Energy spectrum of the transition metal impurity which substitutes a cation in a zink-blende structure semiconductor with an ideal surface is investigated theoretically. Model Hamiltonian of the semiconductor is treated by the semi-empirical tight-binding method, and energy of deep 3d-levels is d...