Theory of high-field electron transport in the heterostructures AlxGa₁₋xAs/GaAs/AlxGa₁₋xAs with delta-doped barriers. Effect of real-space transfer
Steady-state electric characteristics of quantum heterostructures AlxGa₁₋xAs/GaAs/AlxGa₁₋xAs with -doped barriers have been analyzed in this work. It has been shown that at high doping the additional low-conductive channels are formed in the barrier layers. Current-voltage characteristics of the st...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2015 |
| Main Author: | |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/119925 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Theory of high-field electron transport in the heterostructures AlxGa₁₋xAs/GaAs/AlxGa₁₋xAs with delta-doped barriers. Effect of real-space transfer / V.V. Korotyeyev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 1-11. — Бібліогр.: 31 назв. — англ. |