Investigation of electrical c haracteristics of heteroepitaxial structures as a function of microrelief and manufacturing technology features

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2005
• Hauptverfasser: Dmitruk, N.L., Karimov, A.V., Konakova, R.V., Kudryk, Ya.Ya., Sachenko, A.V.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2005
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/119964
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Investigation of electrical c haracteristics of heteroepitaxial structures as a function of microrelief and manufacturing technology features / N.L. Dmitruk, A.V. Karimov, R.V. Konakova, Ya.Ya. Kudryk, A.V. Sachenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 46-52. — Бібліогр.: 6 назв. — англ.

Over a wide temperature range (77…400 K), we studied I-V curves of photoelectric converter (solar cell) prototypes made on the basis of p-AlxGa₁-xAs– p-GaAs–n-GaAs–n⁺-GaAs heteroepitaxial structures grown on smooth or microrelief n⁺-GaAs substrates using the standard liquid phase epitaxy (LPE) and t...