Investigation of electrical c haracteristics of heteroepitaxial structures as a function of microrelief and manufacturing technology features
Over a wide temperature range (77…400 K), we studied I-V curves of photoelectric converter (solar cell) prototypes made on the basis of p-AlxGa₁-xAs– p-GaAs–n-GaAs–n⁺-GaAs heteroepitaxial structures grown on smooth or microrelief n⁺-GaAs substrates using the standard liquid phase epitaxy (LPE) and t...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2005 |
| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2005
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/119964 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Investigation of electrical c haracteristics of heteroepitaxial structures as a function of microrelief and manufacturing technology features / N.L. Dmitruk, A.V. Karimov, R.V. Konakova, Ya.Ya. Kudryk, A.V. Sachenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 46-52. — Бібліогр.: 6 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862667702215114752 |
|---|---|
| author | Dmitruk, N.L. Karimov, A.V. Konakova, R.V. Kudryk, Ya.Ya. Sachenko, A.V. |
| author_facet | Dmitruk, N.L. Karimov, A.V. Konakova, R.V. Kudryk, Ya.Ya. Sachenko, A.V. |
| citation_txt | Investigation of electrical c haracteristics of heteroepitaxial structures as a function of microrelief and manufacturing technology features / N.L. Dmitruk, A.V. Karimov, R.V. Konakova, Ya.Ya. Kudryk, A.V. Sachenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 46-52. — Бібліогр.: 6 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Over a wide temperature range (77…400 K), we studied I-V curves of photoelectric converter (solar cell) prototypes made on the basis of p-AlxGa₁-xAs– p-GaAs–n-GaAs–n⁺-GaAs heteroepitaxial structures grown on smooth or microrelief n⁺-GaAs substrates using the standard liquid phase epitaxy (LPE) and the capillary LPE from a confined volume, as well as the effect of some external factors (thermal treatment and 60Со γ-irradiation) on the current flow mechanisms. At temperatures ≤ 200 K, the tunnel component of the forward current was predominant in all the smooth samples studied up to the voltages close to 1 V, while at room temperatures all three components (diffusion, recombination and tunnel) were of the same order. This is evidenced, in particular, by the dependencys of the effective ideality factor on the applied voltage. Predominance of the tunnel current component in a wide temperature range at small biases was observed for all the solar cells obtained on the textured n⁺-GaAs substrates. In this case, an additional factor favoring the increase of the tunnel current component was relief irregularities with small curvature radii.
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| first_indexed | 2025-12-07T15:23:29Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-119964 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T15:23:29Z |
| publishDate | 2005 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Dmitruk, N.L. Karimov, A.V. Konakova, R.V. Kudryk, Ya.Ya. Sachenko, A.V. 2017-06-10T13:41:40Z 2017-06-10T13:41:40Z 2005 Investigation of electrical c haracteristics of heteroepitaxial structures as a function of microrelief and manufacturing technology features / N.L. Dmitruk, A.V. Karimov, R.V. Konakova, Ya.Ya. Kudryk, A.V. Sachenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 46-52. — Бібліогр.: 6 назв. — англ. 1560-8034 PACS: 72.40.+w, 72.20.j, 84.60.j. https://nasplib.isofts.kiev.ua/handle/123456789/119964 Over a wide temperature range (77…400 K), we studied I-V curves of photoelectric converter (solar cell) prototypes made on the basis of p-AlxGa₁-xAs– p-GaAs–n-GaAs–n⁺-GaAs heteroepitaxial structures grown on smooth or microrelief n⁺-GaAs substrates using the standard liquid phase epitaxy (LPE) and the capillary LPE from a confined volume, as well as the effect of some external factors (thermal treatment and 60Со γ-irradiation) on the current flow mechanisms. At temperatures ≤ 200 K, the tunnel component of the forward current was predominant in all the smooth samples studied up to the voltages close to 1 V, while at room temperatures all three components (diffusion, recombination and tunnel) were of the same order. This is evidenced, in particular, by the dependencys of the effective ideality factor on the applied voltage. Predominance of the tunnel current component in a wide temperature range at small biases was observed for all the solar cells obtained on the textured n⁺-GaAs substrates. In this case, an additional factor favoring the increase of the tunnel current component was relief irregularities with small curvature radii. This work was supported by the Science and Technology
 Center in Ukraine (Grant UZB-56(J)). en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Investigation of electrical c haracteristics of heteroepitaxial structures as a function of microrelief and manufacturing technology features Article published earlier |
| spellingShingle | Investigation of electrical c haracteristics of heteroepitaxial structures as a function of microrelief and manufacturing technology features Dmitruk, N.L. Karimov, A.V. Konakova, R.V. Kudryk, Ya.Ya. Sachenko, A.V. |
| title | Investigation of electrical c haracteristics of heteroepitaxial structures as a function of microrelief and manufacturing technology features |
| title_full | Investigation of electrical c haracteristics of heteroepitaxial structures as a function of microrelief and manufacturing technology features |
| title_fullStr | Investigation of electrical c haracteristics of heteroepitaxial structures as a function of microrelief and manufacturing technology features |
| title_full_unstemmed | Investigation of electrical c haracteristics of heteroepitaxial structures as a function of microrelief and manufacturing technology features |
| title_short | Investigation of electrical c haracteristics of heteroepitaxial structures as a function of microrelief and manufacturing technology features |
| title_sort | investigation of electrical c haracteristics of heteroepitaxial structures as a function of microrelief and manufacturing technology features |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119964 |
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