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Investigation of electrical c haracteristics of heteroepitaxial structures as a function of microrelief and manufacturing technology features

Over a wide temperature range (77…400 K), we studied I-V curves of photoelectric converter (solar cell) prototypes made on the basis of p-AlxGa₁-xAs– p-GaAs–n-GaAs–n⁺-GaAs heteroepitaxial structures grown on smooth or microrelief n⁺-GaAs substrates using the standard liquid phase epitaxy (LPE) and t...

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Veröffentlicht in:	Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:	2005
Hauptverfasser:	Dmitruk, N.L., Karimov, A.V., Konakova, R.V., Kudryk, Ya.Ya., Sachenko, A.V.
Format:	Artikel
Sprache:	Englisch
Veröffentlicht:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2005
Online Zugang:	https://nasplib.isofts.kiev.ua/handle/123456789/119964
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:	Investigation of electrical c haracteristics of heteroepitaxial structures as a function of microrelief and manufacturing technology features / N.L. Dmitruk, A.V. Karimov, R.V. Konakova, Ya.Ya. Kudryk, A.V. Sachenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 46-52. — Бібліогр.: 6 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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