Influence of the surface roughness and oxide surface layer onto Si optical constants measured by the ellipsometry technique
Si crystal surface after chemical etching was studied using ellipsometry, atomic force microscopy and scanning tunneling microscopy. The ellipsometric parameters as functions of light incidence angles at two light wavelengths 546.1 and 296.7 nm were measured. The calculations based on equations for...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2015 |
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| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/119992 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Influence of the surface roughness and oxide surface layer onto Si optical constants measured by the ellipsometry technique / T.S. Rozouvan, L.V. Poperenko, I.A. Shaykevich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 26-30. — Бібліогр.: 15 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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Rozouvan, T.S. Poperenko, L.V. Shaykevich, I.A. 2017-06-10T17:03:17Z 2017-06-10T17:03:17Z 2015 Influence of the surface roughness and oxide surface layer onto Si optical constants measured by the ellipsometry technique / T.S. Rozouvan, L.V. Poperenko, I.A. Shaykevich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 26-30. — Бібліогр.: 15 назв. — англ. 1560-8034 PACS 68.37.Ef https://nasplib.isofts.kiev.ua/handle/123456789/119992 DOI: 10.15407/spqeo18.01.026 Si crystal surface after chemical etching was studied using ellipsometry, atomic force microscopy and scanning tunneling microscopy. The ellipsometric parameters as functions of light incidence angles at two light wavelengths 546.1 and 296.7 nm were measured. The calculations based on equations for the plane surface have shown that the refractive index and absorption coefficient values are different from those determined earlier. Two models for surface layers were developed. After etching, the upper layer contains chemical compounds and the lower layer characterizes the sample roughness. By applying Airy’s formula to ellipsometric data, optical constants and thicknesses of the layers were obtained. The calculated values of bulk Si optical constants wholly correspond to the data from literature. The calculated thickness of the lower layer is similar to that obtained through scanning tunneling microscopy measurements. Calculations based on Maxwell-Garnett and Bruggeman equations were performed to determine the content of silicon particles within the lower rough layer. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Influence of the surface roughness and oxide surface layer onto Si optical constants measured by the ellipsometry technique Article published earlier |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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DSpace DC |
| title |
Influence of the surface roughness and oxide surface layer onto Si optical constants measured by the ellipsometry technique |
| spellingShingle |
Influence of the surface roughness and oxide surface layer onto Si optical constants measured by the ellipsometry technique Rozouvan, T.S. Poperenko, L.V. Shaykevich, I.A. |
| title_short |
Influence of the surface roughness and oxide surface layer onto Si optical constants measured by the ellipsometry technique |
| title_full |
Influence of the surface roughness and oxide surface layer onto Si optical constants measured by the ellipsometry technique |
| title_fullStr |
Influence of the surface roughness and oxide surface layer onto Si optical constants measured by the ellipsometry technique |
| title_full_unstemmed |
Influence of the surface roughness and oxide surface layer onto Si optical constants measured by the ellipsometry technique |
| title_sort |
influence of the surface roughness and oxide surface layer onto si optical constants measured by the ellipsometry technique |
| author |
Rozouvan, T.S. Poperenko, L.V. Shaykevich, I.A. |
| author_facet |
Rozouvan, T.S. Poperenko, L.V. Shaykevich, I.A. |
| publishDate |
2015 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Si crystal surface after chemical etching was studied using ellipsometry, atomic force microscopy and scanning tunneling microscopy. The ellipsometric parameters as functions of light incidence angles at two light wavelengths 546.1 and 296.7 nm were measured. The calculations based on equations for the plane surface have shown that the refractive index and absorption coefficient values are different from those determined earlier. Two models for surface layers were developed. After etching, the upper layer contains chemical compounds and the lower layer characterizes the sample roughness. By applying Airy’s formula to ellipsometric data, optical constants and thicknesses of the layers were obtained. The calculated values of bulk Si optical constants wholly correspond to the data from literature. The calculated thickness of the lower layer is similar to that obtained through scanning tunneling microscopy measurements. Calculations based on Maxwell-Garnett and Bruggeman equations were performed to determine the content of silicon particles within the lower rough layer.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/119992 |
| citation_txt |
Influence of the surface roughness and oxide surface layer onto Si optical constants measured by the ellipsometry technique / T.S. Rozouvan, L.V. Poperenko, I.A. Shaykevich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 26-30. — Бібліогр.: 15 назв. — англ. |
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| first_indexed |
2025-12-07T15:47:10Z |
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2025-12-07T15:47:10Z |
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