The distribution of field-induced charges in C₆₀ fullerite
The profile of injected charges in a C₆₀-based field-effect transistor (FET) is considered. A simple
 scheme for calculations of the charge distribution between the 2D layers of C₆₀ molecules is
 founded on a small magnitude of the interball electron hopping. Analytical solutions of...
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| Опубліковано в: : | Физика низких температур |
|---|---|
| Дата: | 2006 |
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2006
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| Теми: | |
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/120055 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | The distribution of field-induced charges in C₆₀ fullerite / V.A. Kuprievich, O.L. Kapitanchuk, O.V. Shramko, Z.G. Kudritska // Физика низких температур. — 2006. — Т. 32, № 1. — С. 125-128. — Бібліогр.: 16 назв. — рос. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862729911784964096 |
|---|---|
| author | Kuprievich, V.A. Kapitanchuk, O.L. Shramko, O.V. Kudritska, Z.G. |
| author_facet | Kuprievich, V.A. Kapitanchuk, O.L. Shramko, O.V. Kudritska, Z.G. |
| citation_txt | The distribution of field-induced charges in C₆₀ fullerite / V.A. Kuprievich, O.L. Kapitanchuk, O.V. Shramko, Z.G. Kudritska // Физика низких температур. — 2006. — Т. 32, № 1. — С. 125-128. — Бібліогр.: 16 назв. — рос. |
| collection | DSpace DC |
| container_title | Физика низких температур |
| description | The profile of injected charges in a C₆₀-based field-effect transistor (FET) is considered. A simple
scheme for calculations of the charge distribution between the 2D layers of C₆₀ molecules is
founded on a small magnitude of the interball electron hopping. Analytical solutions of the equations
for the charge distributions are obtained in the limits of thick and thin crystals. The charge
density is shown to drop exponentially with the crystal depth. The calculations predict the relative
part of induced charges involved in the surface layer to be 3/4 and 2/3 in the cases of electron
and hole injection, respectively.
|
| first_indexed | 2025-12-07T19:17:30Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-120055 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 0132-6414 |
| language | English |
| last_indexed | 2025-12-07T19:17:30Z |
| publishDate | 2006 |
| publisher | Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| record_format | dspace |
| spelling | Kuprievich, V.A. Kapitanchuk, O.L. Shramko, O.V. Kudritska, Z.G. 2017-06-10T19:51:57Z 2017-06-10T19:51:57Z 2006 The distribution of field-induced charges in C₆₀ fullerite / V.A. Kuprievich, O.L. Kapitanchuk, O.V. Shramko, Z.G. Kudritska // Физика низких температур. — 2006. — Т. 32, № 1. — С. 125-128. — Бібліогр.: 16 назв. — рос. 0132-6414 PACS: 71.10.–w, 31.25.Eb, 73.90.+f https://nasplib.isofts.kiev.ua/handle/123456789/120055 The profile of injected charges in a C₆₀-based field-effect transistor (FET) is considered. A simple
 scheme for calculations of the charge distribution between the 2D layers of C₆₀ molecules is
 founded on a small magnitude of the interball electron hopping. Analytical solutions of the equations
 for the charge distributions are obtained in the limits of thick and thin crystals. The charge
 density is shown to drop exponentially with the crystal depth. The calculations predict the relative
 part of induced charges involved in the surface layer to be 3/4 and 2/3 in the cases of electron
 and hole injection, respectively. The authors are thankful to Prof. V. Loktev and
 Prof. E. Petrov for useful discussions. This work was
 partially supported under contract of the Ukrainian
 Scientific Program «Nanostructures, Nanomaterials
 and Nanotechnologies» (project No. 8/05—H). en Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України Физика низких температур Низкоразмерные и неупорядоченные системы The distribution of field-induced charges in C₆₀ fullerite Article published earlier |
| spellingShingle | The distribution of field-induced charges in C₆₀ fullerite Kuprievich, V.A. Kapitanchuk, O.L. Shramko, O.V. Kudritska, Z.G. Низкоразмерные и неупорядоченные системы |
| title | The distribution of field-induced charges in C₆₀ fullerite |
| title_full | The distribution of field-induced charges in C₆₀ fullerite |
| title_fullStr | The distribution of field-induced charges in C₆₀ fullerite |
| title_full_unstemmed | The distribution of field-induced charges in C₆₀ fullerite |
| title_short | The distribution of field-induced charges in C₆₀ fullerite |
| title_sort | distribution of field-induced charges in c₆₀ fullerite |
| topic | Низкоразмерные и неупорядоченные системы |
| topic_facet | Низкоразмерные и неупорядоченные системы |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/120055 |
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