Effect of temperature variation on shift and broadening of exciton band in Cs₃Bi₂I₉ layered crystals

The exciton reflection spectra of Cs₃Bi₂I₉ layered crystals is investigated in the temperature region
 4.2–300 K with light polarization E ⊥ c. It is estimated that the energy gap Eg equals
 2.857 eV (T = 4.2 K) and the exciton binding energy Ry is 279 meV. A nontraditional tempera...

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Veröffentlicht in:Физика низких температур
Datum:2004
Hauptverfasser: Machulin, V.F., Motsnyi, F.V., Peresh, E.Yu., Smolanka, O.M., Svechnikov, G.S.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2004
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Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/120368
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Zitieren:Effect of temperature variation on shift and broadening of exciton band in Cs₃Bi₂I₉ layered crystals / V.F. Machulin, F.V. Motsnyi, E.Yu. Peresh, O.M. Smolanka, G.S. Svechnikov // Физика низких температур. — 2004. — Т. 30, № 12. — С. 1283–1286. — Бібліогр.: 30 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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author Machulin, V.F.
Motsnyi, F.V.
Peresh, E.Yu.
Smolanka, O.M.
Svechnikov, G.S.
author_facet Machulin, V.F.
Motsnyi, F.V.
Peresh, E.Yu.
Smolanka, O.M.
Svechnikov, G.S.
citation_txt Effect of temperature variation on shift and broadening of exciton band in Cs₃Bi₂I₉ layered crystals / V.F. Machulin, F.V. Motsnyi, E.Yu. Peresh, O.M. Smolanka, G.S. Svechnikov // Физика низких температур. — 2004. — Т. 30, № 12. — С. 1283–1286. — Бібліогр.: 30 назв. — англ.
collection DSpace DC
container_title Физика низких температур
description The exciton reflection spectra of Cs₃Bi₂I₉ layered crystals is investigated in the temperature region
 4.2–300 K with light polarization E ⊥ c. It is estimated that the energy gap Eg equals
 2.857 eV (T = 4.2 K) and the exciton binding energy Ry is 279 meV. A nontraditional temperature
 shift of Eg(T) for the layered substances is found for the first time. It is learned that this shift is
 described very well by the Varshni formula. A transition region in the temperature broadening of
 the half-width H(T) of the exciton band with the increase of temperature is registered in the interval
 between 150 and 220 K. It is shown that this region may be identified as the heterophase structure
 region where ferroelastic and paraelastic phases coexist. A surge of H(T) at the point of the
 ferroelastic phase transition (Tc = 220 K) is also observed.
first_indexed 2025-11-27T02:19:38Z
format Article
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id nasplib_isofts_kiev_ua-123456789-120368
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
issn 0132-6414
language English
last_indexed 2025-11-27T02:19:38Z
publishDate 2004
publisher Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
record_format dspace
spelling Machulin, V.F.
Motsnyi, F.V.
Peresh, E.Yu.
Smolanka, O.M.
Svechnikov, G.S.
2017-06-12T06:29:41Z
2017-06-12T06:29:41Z
2004
Effect of temperature variation on shift and broadening of exciton band in Cs₃Bi₂I₉ layered crystals / V.F. Machulin, F.V. Motsnyi, E.Yu. Peresh, O.M. Smolanka, G.S. Svechnikov // Физика низких температур. — 2004. — Т. 30, № 12. — С. 1283–1286. — Бібліогр.: 30 назв. — англ.
0132-6414
PACS: 64.70.Kb, 71.35.Cc, 78.40.Fy
https://nasplib.isofts.kiev.ua/handle/123456789/120368
The exciton reflection spectra of Cs₃Bi₂I₉ layered crystals is investigated in the temperature region
 4.2–300 K with light polarization E ⊥ c. It is estimated that the energy gap Eg equals
 2.857 eV (T = 4.2 K) and the exciton binding energy Ry is 279 meV. A nontraditional temperature
 shift of Eg(T) for the layered substances is found for the first time. It is learned that this shift is
 described very well by the Varshni formula. A transition region in the temperature broadening of
 the half-width H(T) of the exciton band with the increase of temperature is registered in the interval
 between 150 and 220 K. It is shown that this region may be identified as the heterophase structure
 region where ferroelastic and paraelastic phases coexist. A surge of H(T) at the point of the
 ferroelastic phase transition (Tc = 220 K) is also observed.
en
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
Физика низких температур
Квантовые эффекты в полупpоводниках и диэлектриках
Effect of temperature variation on shift and broadening of exciton band in Cs₃Bi₂I₉ layered crystals
Article
published earlier
spellingShingle Effect of temperature variation on shift and broadening of exciton band in Cs₃Bi₂I₉ layered crystals
Machulin, V.F.
Motsnyi, F.V.
Peresh, E.Yu.
Smolanka, O.M.
Svechnikov, G.S.
Квантовые эффекты в полупpоводниках и диэлектриках
title Effect of temperature variation on shift and broadening of exciton band in Cs₃Bi₂I₉ layered crystals
title_full Effect of temperature variation on shift and broadening of exciton band in Cs₃Bi₂I₉ layered crystals
title_fullStr Effect of temperature variation on shift and broadening of exciton band in Cs₃Bi₂I₉ layered crystals
title_full_unstemmed Effect of temperature variation on shift and broadening of exciton band in Cs₃Bi₂I₉ layered crystals
title_short Effect of temperature variation on shift and broadening of exciton band in Cs₃Bi₂I₉ layered crystals
title_sort effect of temperature variation on shift and broadening of exciton band in cs₃bi₂i₉ layered crystals
topic Квантовые эффекты в полупpоводниках и диэлектриках
topic_facet Квантовые эффекты в полупpоводниках и диэлектриках
url https://nasplib.isofts.kiev.ua/handle/123456789/120368
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