Effect of temperature variation on shift and broadening of exciton band in Cs₃Bi₂I₉ layered crystals
The exciton reflection spectra of Cs₃Bi₂I₉ layered crystals is investigated in the temperature region
 4.2–300 K with light polarization E ⊥ c. It is estimated that the energy gap Eg equals
 2.857 eV (T = 4.2 K) and the exciton binding energy Ry is 279 meV. A nontraditional tempera...
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| Published in: | Физика низких температур |
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| Date: | 2004 |
| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
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Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2004
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/120368 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Effect of temperature variation on shift and broadening of exciton band in Cs₃Bi₂I₉ layered crystals / V.F. Machulin, F.V. Motsnyi, E.Yu. Peresh, O.M. Smolanka, G.S. Svechnikov // Физика низких температур. — 2004. — Т. 30, № 12. — С. 1283–1286. — Бібліогр.: 30 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862588619958517760 |
|---|---|
| author | Machulin, V.F. Motsnyi, F.V. Peresh, E.Yu. Smolanka, O.M. Svechnikov, G.S. |
| author_facet | Machulin, V.F. Motsnyi, F.V. Peresh, E.Yu. Smolanka, O.M. Svechnikov, G.S. |
| citation_txt | Effect of temperature variation on shift and broadening of exciton band in Cs₃Bi₂I₉ layered crystals / V.F. Machulin, F.V. Motsnyi, E.Yu. Peresh, O.M. Smolanka, G.S. Svechnikov // Физика низких температур. — 2004. — Т. 30, № 12. — С. 1283–1286. — Бібліогр.: 30 назв. — англ. |
| collection | DSpace DC |
| container_title | Физика низких температур |
| description | The exciton reflection spectra of Cs₃Bi₂I₉ layered crystals is investigated in the temperature region
4.2–300 K with light polarization E ⊥ c. It is estimated that the energy gap Eg equals
2.857 eV (T = 4.2 K) and the exciton binding energy Ry is 279 meV. A nontraditional temperature
shift of Eg(T) for the layered substances is found for the first time. It is learned that this shift is
described very well by the Varshni formula. A transition region in the temperature broadening of
the half-width H(T) of the exciton band with the increase of temperature is registered in the interval
between 150 and 220 K. It is shown that this region may be identified as the heterophase structure
region where ferroelastic and paraelastic phases coexist. A surge of H(T) at the point of the
ferroelastic phase transition (Tc = 220 K) is also observed.
|
| first_indexed | 2025-11-27T02:19:38Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-120368 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 0132-6414 |
| language | English |
| last_indexed | 2025-11-27T02:19:38Z |
| publishDate | 2004 |
| publisher | Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| record_format | dspace |
| spelling | Machulin, V.F. Motsnyi, F.V. Peresh, E.Yu. Smolanka, O.M. Svechnikov, G.S. 2017-06-12T06:29:41Z 2017-06-12T06:29:41Z 2004 Effect of temperature variation on shift and broadening of exciton band in Cs₃Bi₂I₉ layered crystals / V.F. Machulin, F.V. Motsnyi, E.Yu. Peresh, O.M. Smolanka, G.S. Svechnikov // Физика низких температур. — 2004. — Т. 30, № 12. — С. 1283–1286. — Бібліогр.: 30 назв. — англ. 0132-6414 PACS: 64.70.Kb, 71.35.Cc, 78.40.Fy https://nasplib.isofts.kiev.ua/handle/123456789/120368 The exciton reflection spectra of Cs₃Bi₂I₉ layered crystals is investigated in the temperature region
 4.2–300 K with light polarization E ⊥ c. It is estimated that the energy gap Eg equals
 2.857 eV (T = 4.2 K) and the exciton binding energy Ry is 279 meV. A nontraditional temperature
 shift of Eg(T) for the layered substances is found for the first time. It is learned that this shift is
 described very well by the Varshni formula. A transition region in the temperature broadening of
 the half-width H(T) of the exciton band with the increase of temperature is registered in the interval
 between 150 and 220 K. It is shown that this region may be identified as the heterophase structure
 region where ferroelastic and paraelastic phases coexist. A surge of H(T) at the point of the
 ferroelastic phase transition (Tc = 220 K) is also observed. en Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України Физика низких температур Квантовые эффекты в полупpоводниках и диэлектриках Effect of temperature variation on shift and broadening of exciton band in Cs₃Bi₂I₉ layered crystals Article published earlier |
| spellingShingle | Effect of temperature variation on shift and broadening of exciton band in Cs₃Bi₂I₉ layered crystals Machulin, V.F. Motsnyi, F.V. Peresh, E.Yu. Smolanka, O.M. Svechnikov, G.S. Квантовые эффекты в полупpоводниках и диэлектриках |
| title | Effect of temperature variation on shift and broadening of exciton band in Cs₃Bi₂I₉ layered crystals |
| title_full | Effect of temperature variation on shift and broadening of exciton band in Cs₃Bi₂I₉ layered crystals |
| title_fullStr | Effect of temperature variation on shift and broadening of exciton band in Cs₃Bi₂I₉ layered crystals |
| title_full_unstemmed | Effect of temperature variation on shift and broadening of exciton band in Cs₃Bi₂I₉ layered crystals |
| title_short | Effect of temperature variation on shift and broadening of exciton band in Cs₃Bi₂I₉ layered crystals |
| title_sort | effect of temperature variation on shift and broadening of exciton band in cs₃bi₂i₉ layered crystals |
| topic | Квантовые эффекты в полупpоводниках и диэлектриках |
| topic_facet | Квантовые эффекты в полупpоводниках и диэлектриках |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/120368 |
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