Electron- and hole-phonon interaction in quantum dot embedded into semiconductor medium (GaAs/AlxGa₁₋xAs)

• Datum: 2001
• Hauptverfasser: Tkach, M.V., Mikhalyova, M.Y., Voitsekhivska, O.M., Fartushinsky, R.B.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики конденсованих систем НАН України 2001
• Schriftenreihe: Condensed Matter Physics
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/120473
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Electron- and hole-phonon interaction in quantum dot embedded into semiconductor medium (GaAs/AlxGa₁₋xAs) / M.V. Tkach, M.Y. Mikhalyova, O.M. Voitsekhivska, R.B. Fartushinsky // Condensed Matter Physics. — 2001. — Т. 4, № 3(27). — С. 579-589. — Бібліогр.: 16 назв. — англ.

The analytical and numerical calculations of electron and hole spectra renormalised by L- and I-phonons taking into account the configurational interaction are performed for the QD embedded into semiconductor medium exemplified by GaAs/AlxGa₁₋xAs nanoheterosystems. It is established that for the nanosize QDs the shifts of electron and hole ground levels are created by the interaction of these quasiparticles with Land I-phonons due to all the states of discrete and continuous spectrum. For the small QDs, the shifts of ground energy levels have strong nonlinear dependences while for the big QDs, they almost do not depend on QD radius and have the magnitude close to the shifts of ground levels in massive crystal creating QD. Due to the different effective masses of light and heavy holes, the splittings of their ground levels are the complicated functions on QD radius and Al concentration in AlxGa₁₋xAs medium.