The influence of defects and conductivity on the domain structure properties and the memory effect in the ferroelectrics-semiconductors Sn₂P₂Se₆
For the proper uniaxial ferroelectrics Sn₂P₂Se₆ with the controlled content of different type of impurities the investigations of dielectric permeability temperature dependence are performed with the aim to determine the influence of the crystal structure defects upon: the efficiency of the thermal...
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| Datum: | 1999 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики конденсованих систем НАН України
1999
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| Schriftenreihe: | Condensed Matter Physics |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/120525 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | The influence of defects and conductivity on the domain structure properties and the memory effect in the ferroelectrics-semiconductors Sn₂P₂Se₆ / Yu.M. Vysochanskii, A.A. Molnar, M.M. Khoma, S.F. Motrja // Condensed Matter Physics. — 1999. — Т. 2, № 3(19). — С. 421-434. — Бібліогр.: 24 назв. — англ. |