The influence of defects and conductivity on the domain structure properties and the memory effect in the ferroelectrics-semiconductors Sn₂P₂Se₆

• Published in: Condensed Matter Physics
• Date: 1999
• Main Authors: Vysochanskii, Yu.M., Molnar, A.A., Khoma, M.M., Motrja, S.F.
• Format: Article
• Language: English
• Published: Інститут фізики конденсованих систем НАН України 1999
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/120525
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: The influence of defects and conductivity on the domain structure properties and the memory effect in the ferroelectrics-semiconductors Sn₂P₂Se₆ / Yu.M. Vysochanskii, A.A. Molnar, M.M. Khoma, S.F. Motrja // Condensed Matter Physics. — 1999. — Т. 2, № 3(19). — С. 421-434. — Бібліогр.: 24 назв. — англ.

For the proper uniaxial ferroelectrics Sn₂P₂Se₆ with the controlled content of different type of impurities the investigations of dielectric permeability temperature dependence are performed with the aim to determine the influence of the crystal structure defects upon: the efficiency of the thermal...