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The influence of defects and conductivity on the domain structure properties and the memory effect in the ferroelectrics-semiconductors Sn₂P₂Se₆

For the proper uniaxial ferroelectrics Sn₂P₂Se₆ with the controlled content
 of different type of impurities the investigations of dielectric permeability
 temperature dependence are performed with the aim to determine the influence of the crystal structure defects upon: the efficiency...

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Veröffentlicht in:Condensed Matter Physics
Datum:1999
ISSN:1607-324X
Hauptverfasser: Vysochanskii, Yu.M., Molnar, A.A., Khoma, M.M., Motrja, S.F.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Інститут фізики конденсованих систем НАН України 1999
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/120525
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:The influence of defects and conductivity on the domain structure properties and the memory effect in the ferroelectrics-semiconductors Sn₂P₂Se₆ / Yu.M. Vysochanskii, A.A. Molnar, M.M. Khoma, S.F. Motrja // Condensed Matter Physics. — 1999. — Т. 2, № 3(19). — С. 421-434. — Бібліогр.: 24 назв. — англ.

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