Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings
Features of changes in the electrophysical parameters (concentrations of charge carriers ne and their mobilities μ ) in heavily doped n-Ge <As> single crystals, which occur as a result of the series of thermoannealings (each for 0.5 h) over a wide temperature range (540 ≤T≤ 900 °C), have b...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2015 |
| Автор: | |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/120727 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings / G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 53-56. — Бібліогр.: 13 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862548980740653056 |
|---|---|
| author | Gaidar, G.P. |
| author_facet | Gaidar, G.P. |
| citation_txt | Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings / G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 53-56. — Бібліогр.: 13 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Features of changes in the electrophysical parameters (concentrations of charge carriers ne and their mobilities μ ) in heavily doped n-Ge <As> single crystals, which occur as a result of the series of thermoannealings (each for 0.5 h) over a wide temperature range (540 ≤T≤ 900 °C), have been investigated and explained.
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| first_indexed | 2025-11-25T20:30:21Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-120727 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-25T20:30:21Z |
| publishDate | 2015 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Gaidar, G.P. 2017-06-12T18:05:39Z 2017-06-12T18:05:39Z 2015 Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings / G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 53-56. — Бібліогр.: 13 назв. — англ. 1560-8034 PACS 61.82.Fk https://nasplib.isofts.kiev.ua/handle/123456789/120727 DOI: 10.15407/spqeo18.01.053 Features of changes in the electrophysical parameters (concentrations of charge carriers ne and their mobilities μ ) in heavily doped n-Ge <As> single crystals, which occur as a result of the series of thermoannealings (each for 0.5 h) over a wide temperature range (540 ≤T≤ 900 °C), have been investigated and explained. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings Article published earlier |
| spellingShingle | Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings Gaidar, G.P. |
| title | Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings |
| title_full | Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings |
| title_fullStr | Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings |
| title_full_unstemmed | Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings |
| title_short | Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings |
| title_sort | changes in electrophysical properties of heavily doped n-ge <as> single crystals under the influence of thermoannealings |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/120727 |
| work_keys_str_mv | AT gaidargp changesinelectrophysicalpropertiesofheavilydopedngeltassinglecrystalsundertheinfluenceofthermoannealings |