Characterization of ZnSe nanocrystals grown by vapor phase epitaxy

This paper reports the application of scanning electron microscopy, x-ray diffraction, and
 photoluminescence techniques for characterization of ZnSe nanocrystals grown on GaAs (100) substrate
 from the vapor phase. The applied characterization techniques show the evidence for coexis...

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Bibliographic Details
Published in:Физика низких температур
Date:2006
Main Authors: Tishchenko, V.V., Kovalenko, A.V.
Format: Article
Language:English
Published: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2006
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Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/120867
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Characterization of ZnSe nanocrystals grown by vapor
 phase epitaxy / V.V. Tishchenko, A.V. Kovalenko // Физика низких температур. — 2006. — Т. 32, № 12. — С. 1545–1550. — Бібліогр.: 21 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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Summary:This paper reports the application of scanning electron microscopy, x-ray diffraction, and
 photoluminescence techniques for characterization of ZnSe nanocrystals grown on GaAs (100) substrate
 from the vapor phase. The applied characterization techniques show the evidence for coexistence
 of two sets of nanocrystals with rather different characteristic sizes. In addition, the lowest
 energy levels of spherically shaped nanocrystals are calculated in the framework of the effective-mass
 approximation and compared with photoluminescence data.
ISSN:0132-6414