Piezoelectric effect in p -Si/SiGe/(001)Si modulation doped heterostructures
We present the results of calculations of the piezoelectric effect in a Si/SiGe
 multilayer structure with a narrow quantum well and a wide layer of doped
 Si semiconductor. The proposed theory is a possible explanation of some
 recent experiments on these structures. Предста...
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| Published in: | Condensed Matter Physics |
|---|---|
| Date: | 2000 |
| Main Authors: | , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики конденсованих систем НАН України
2000
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/120979 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Piezoelectric effect in p -Si/SiGe/(001)Si modulation doped heterostructures / V.K. Dugaev, O.A. Mironov, S.V. Kosyachenko // Condensed Matter Physics. — 2000. — Т. 3, № 4(24). — С. 835-844. — Бібліогр.: 13 назв. — англ. |