Piezoelectric effect in p -Si/SiGe/(001)Si modulation doped heterostructures

• Published in: Condensed Matter Physics
• Date: 2000
• Main Authors: Dugaev, V.K., Mironov, O.A., Kosyachenko, S.V.
• Format: Article
• Language: English
• Published: Інститут фізики конденсованих систем НАН України 2000
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/120979
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Piezoelectric effect in p -Si/SiGe/(001)Si modulation doped heterostructures / V.K. Dugaev, O.A. Mironov, S.V. Kosyachenko // Condensed Matter Physics. — 2000. — Т. 3, № 4(24). — С. 835-844. — Бібліогр.: 13 назв. — англ.

We present the results of calculations of the piezoelectric effect in a Si/SiGe
 multilayer structure with a narrow quantum well and a wide layer of doped
 Si semiconductor. The proposed theory is a possible explanation of some
 recent experiments on these structures. Предста...