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Piezoelectric effect in p -Si/SiGe/(001)Si modulation doped heterostructures

We present the results of calculations of the piezoelectric effect in a Si/SiGe
 multilayer structure with a narrow quantum well and a wide layer of doped
 Si semiconductor. The proposed theory is a possible explanation of some
 recent experiments on these structures. Предста...

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Bibliographic Details
Published in:Condensed Matter Physics
Date:2000
Main Authors: Dugaev, V.K., Mironov, O.A., Kosyachenko, S.V.
Format: Article
Language:English
Published: Інститут фізики конденсованих систем НАН України 2000
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/120979
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Piezoelectric effect in p -Si/SiGe/(001)Si modulation doped heterostructures / V.K. Dugaev, O.A. Mironov, S.V. Kosyachenko // Condensed Matter Physics. — 2000. — Т. 3, № 4(24). — С. 835-844. — Бібліогр.: 13 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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