Piezoelectric effect in p -Si/SiGe/(001)Si modulation doped heterostructures

• Veröffentlicht in: Condensed Matter Physics
• Datum: 2000
• Hauptverfasser: Dugaev, V.K., Mironov, O.A., Kosyachenko, S.V.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики конденсованих систем НАН України 2000
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/120979
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Piezoelectric effect in p -Si/SiGe/(001)Si modulation doped heterostructures / V.K. Dugaev, O.A. Mironov, S.V. Kosyachenko // Condensed Matter Physics. — 2000. — Т. 3, № 4(24). — С. 835-844. — Бібліогр.: 13 назв. — англ.

We present the results of calculations of the piezoelectric effect in a Si/SiGe multilayer structure with a narrow quantum well and a wide layer of doped Si semiconductor. The proposed theory is a possible explanation of some recent experiments on these structures. Представлені результати розраху...