Contacts for silicon IMPATT and pick-off diodes

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2000
• Hauptverfasser: Boltovets, N.S., Goncharuk, N.M., Krivutsa, V.A., Chaika, V.E., Konakova, R.V., Milenin, V.V., Soloviev, E.A., Tagaev, M.B., Voitsikhovskyi, D.I.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2000
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/121159
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Contacts for silicon IMPATT and pick-off diodes / N.S. Boltovets, N.M. Goncharuk, V.A. Krivutsa, V.E. Chaika, R.V. Konakova, V.V. Milenin, E.A. Soloviev, M.B. Tagaev, D.I. Voitsikhovskyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 352-358. — Бібліогр.: 13 назв. — англ.

We studied experimentally: (i) the ways to fabricate metal-n⁺-Si ohmic contacts with Schottky barriers; (ii) how elemental, structural and phase composition of barrier layers in the contact system, as well as of the barrier layer-semiconductor interface, depend on the formation techniques and condit...