Contacts for silicon IMPATT and pick-off diodes
We studied experimentally: (i) the ways to fabricate metal-n⁺-Si ohmic contacts with Schottky barriers; (ii) how elemental, structural and phase composition of barrier layers in the contact system, as well as of the barrier layer-semiconductor interface, depend on the formation techniques and condit...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2000 |
| Main Authors: | , , , , , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121159 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Contacts for silicon IMPATT and pick-off diodes / N.S. Boltovets, N.M. Goncharuk, V.A. Krivutsa, V.E. Chaika, R.V. Konakova, V.V. Milenin, E.A. Soloviev, M.B. Tagaev, D.I. Voitsikhovskyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 352-358. — Бібліогр.: 13 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862711275508727808 |
|---|---|
| author | Boltovets, N.S. Goncharuk, N.M. Krivutsa, V.A. Chaika, V.E. Konakova, R.V. Milenin, V.V. Soloviev, E.A. Tagaev, M.B. Voitsikhovskyi, D.I. |
| author_facet | Boltovets, N.S. Goncharuk, N.M. Krivutsa, V.A. Chaika, V.E. Konakova, R.V. Milenin, V.V. Soloviev, E.A. Tagaev, M.B. Voitsikhovskyi, D.I. |
| citation_txt | Contacts for silicon IMPATT and pick-off diodes / N.S. Boltovets, N.M. Goncharuk, V.A. Krivutsa, V.E. Chaika, R.V. Konakova, V.V. Milenin, E.A. Soloviev, M.B. Tagaev, D.I. Voitsikhovskyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 352-358. — Бібліогр.: 13 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | We studied experimentally: (i) the ways to fabricate metal-n⁺-Si ohmic contacts with Schottky barriers; (ii) how elemental, structural and phase composition of barrier layers in the contact system, as well as of the barrier layer-semiconductor interface, depend on the formation techniques and conditions; (iii) their evolution at heating and under ⁶⁰Co g-radiation. Some versions of technique to form palladium, titanium, gold barrier layers using thermal and magnetron sputtering, as well as thermionic synthesis, are discussed. We investigated the structure, as well as phase and elemental composition, of both the barrier layers in contact system and barrier layer-semiconductor interface as a function of the formation techniques and conditions, and their evolution under heating and ⁶⁰Co g-radiation. For technological processes of contact system and mesa formation a simulation was performed to determine what contact systems are promising for use in manufacturing technology of silicon IMPATT and pick-off diodes for the millimeter wavelength range. Some conditions have been found that are necessary for production of high-performance contact systems. The heat and radiation tolerance ranges for barrier structures were considered. It was shown that the Si-Ti-TiB2-Au contact systems are best suited for production of silicon IMPATT and pick-off diode structures intended for the millimeter wavelength range.
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| first_indexed | 2025-12-07T17:29:50Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121159 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T17:29:50Z |
| publishDate | 2000 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Boltovets, N.S. Goncharuk, N.M. Krivutsa, V.A. Chaika, V.E. Konakova, R.V. Milenin, V.V. Soloviev, E.A. Tagaev, M.B. Voitsikhovskyi, D.I. 2017-06-13T15:55:51Z 2017-06-13T15:55:51Z 2000 Contacts for silicon IMPATT and pick-off diodes / N.S. Boltovets, N.M. Goncharuk, V.A. Krivutsa, V.E. Chaika, R.V. Konakova, V.V. Milenin, E.A. Soloviev, M.B. Tagaev, D.I. Voitsikhovskyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 352-358. — Бібліогр.: 13 назв. — англ. 1560-8034 PACS 73.40. Ns, 68.60 Dv https://nasplib.isofts.kiev.ua/handle/123456789/121159 We studied experimentally: (i) the ways to fabricate metal-n⁺-Si ohmic contacts with Schottky barriers; (ii) how elemental, structural and phase composition of barrier layers in the contact system, as well as of the barrier layer-semiconductor interface, depend on the formation techniques and conditions; (iii) their evolution at heating and under ⁶⁰Co g-radiation. Some versions of technique to form palladium, titanium, gold barrier layers using thermal and magnetron sputtering, as well as thermionic synthesis, are discussed. We investigated the structure, as well as phase and elemental composition, of both the barrier layers in contact system and barrier layer-semiconductor interface as a function of the formation techniques and conditions, and their evolution under heating and ⁶⁰Co g-radiation. For technological processes of contact system and mesa formation a simulation was performed to determine what contact systems are promising for use in manufacturing technology of silicon IMPATT and pick-off diodes for the millimeter wavelength range. Some conditions have been found that are necessary for production of high-performance contact systems. The heat and radiation tolerance ranges for barrier structures were considered. It was shown that the Si-Ti-TiB2-Au contact systems are best suited for production of silicon IMPATT and pick-off diode structures intended for the millimeter wavelength range. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Contacts for silicon IMPATT and pick-off diodes Article published earlier |
| spellingShingle | Contacts for silicon IMPATT and pick-off diodes Boltovets, N.S. Goncharuk, N.M. Krivutsa, V.A. Chaika, V.E. Konakova, R.V. Milenin, V.V. Soloviev, E.A. Tagaev, M.B. Voitsikhovskyi, D.I. |
| title | Contacts for silicon IMPATT and pick-off diodes |
| title_full | Contacts for silicon IMPATT and pick-off diodes |
| title_fullStr | Contacts for silicon IMPATT and pick-off diodes |
| title_full_unstemmed | Contacts for silicon IMPATT and pick-off diodes |
| title_short | Contacts for silicon IMPATT and pick-off diodes |
| title_sort | contacts for silicon impatt and pick-off diodes |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121159 |
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