Properties of SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures used in production of transmission lines
We investigated electrophysical properties of the SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures that are used in technological process when manufacturing transmission lines for microwave integrated circuits. The SiO₂-GaAs structures were formed using different techniques, namely, (i) monosilane oxidation...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2002 |
| Main Authors: | , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121160 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Properties of SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures used in production of transmission lines / N.S. Boltovets, G.N. Kashin, R.V. Konakova, V.G. Lyapin, V.V. Milenin, E.A. Soloviev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 183-187. — Бібліогр.: 6 назв. — англ. |