Properties of SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures used in production of transmission lines

Properties of SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures used in production of transmission lines

We investigated electrophysical properties of the SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures that are used in technological process when manufacturing transmission lines for microwave integrated circuits. The SiO₂-GaAs structures were formed using different techniques, namely, (i) monosilane oxidation...

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Опубліковано в: :Semiconductor Physics Quantum Electronics & Optoelectronics
Дата:2002
Автори: Boltovets, N.S., Kashin, G.N., Konakova, R.V., Lyapin, V.G., Milenin, V.V., Soloviev, E.A.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2002
Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/121160
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Properties of SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures used in production of transmission lines / N.S. Boltovets, G.N. Kashin, R.V. Konakova, V.G. Lyapin, V.V. Milenin, E.A. Soloviev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 183-187. — Бібліогр.: 6 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-121160
record_format dspace
spelling Boltovets, N.S.
Kashin, G.N.
Konakova, R.V.
Lyapin, V.G.
Milenin, V.V.
Soloviev, E.A.
2017-06-13T15:56:45Z
2017-06-13T15:56:45Z
2002
Properties of SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures used in production of transmission lines / N.S. Boltovets, G.N. Kashin, R.V. Konakova, V.G. Lyapin, V.V. Milenin, E.A. Soloviev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 183-187. — Бібліогр.: 6 назв. — англ.
1560-8034
PACS: 68.65.A
https://nasplib.isofts.kiev.ua/handle/123456789/121160
We investigated electrophysical properties of the SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures that are used in technological process when manufacturing transmission lines for microwave integrated circuits. The SiO₂-GaAs structures were formed using different techniques, namely, (i) monosilane oxidation in oxygen, (ii) high-temperature tetraethoxysilane decomposition, (iii) high-frequency cathode sputtering of quartz in argon plasma, and (iv) electron-beam evaporation of quartz in a vacuum. The SiO₂ films obtained using monosilane oxidation or electron-beam evaporation of quartz demonstrated better properties. For the Au-Ti-SiO₂-GaAs structures a layer structure transformation was shown to occur, with formation of TiOx-SiO₂ junction and gold atoms penetration over the whole adhesion layer thickness. The microwave oscillator modules made using the Au-Ti-SiO₂-GaAs (Si) structures demonstrated output power of 10-60 mW in the 8 mm wavelength range.
This work was supported bу the INCOCOPERNICUS Program (Project No 977131 "MEMSWАVE").
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Properties of SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures used in production of transmission lines
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Properties of SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures used in production of transmission lines
spellingShingle Properties of SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures used in production of transmission lines
Boltovets, N.S.
Kashin, G.N.
Konakova, R.V.
Lyapin, V.G.
Milenin, V.V.
Soloviev, E.A.
title_short Properties of SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures used in production of transmission lines
title_full Properties of SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures used in production of transmission lines
title_fullStr Properties of SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures used in production of transmission lines
title_full_unstemmed Properties of SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures used in production of transmission lines
title_sort properties of sio₂-gaas and au-ti-sio₂-gaas structures used in production of transmission lines
author Boltovets, N.S.
Kashin, G.N.
Konakova, R.V.
Lyapin, V.G.
Milenin, V.V.
Soloviev, E.A.
author_facet Boltovets, N.S.
Kashin, G.N.
Konakova, R.V.
Lyapin, V.G.
Milenin, V.V.
Soloviev, E.A.
publishDate 2002
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description We investigated electrophysical properties of the SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures that are used in technological process when manufacturing transmission lines for microwave integrated circuits. The SiO₂-GaAs structures were formed using different techniques, namely, (i) monosilane oxidation in oxygen, (ii) high-temperature tetraethoxysilane decomposition, (iii) high-frequency cathode sputtering of quartz in argon plasma, and (iv) electron-beam evaporation of quartz in a vacuum. The SiO₂ films obtained using monosilane oxidation or electron-beam evaporation of quartz demonstrated better properties. For the Au-Ti-SiO₂-GaAs structures a layer structure transformation was shown to occur, with formation of TiOx-SiO₂ junction and gold atoms penetration over the whole adhesion layer thickness. The microwave oscillator modules made using the Au-Ti-SiO₂-GaAs (Si) structures demonstrated output power of 10-60 mW in the 8 mm wavelength range.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/121160
citation_txt Properties of SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures used in production of transmission lines / N.S. Boltovets, G.N. Kashin, R.V. Konakova, V.G. Lyapin, V.V. Milenin, E.A. Soloviev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 183-187. — Бібліогр.: 6 назв. — англ.
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first_indexed 2025-12-07T16:18:39Z
last_indexed 2025-12-07T16:18:39Z
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