Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2000
• Hauptverfasser: Boltovets, N.S., Basanets, V.V., Ivanov, V.N., Krivutsa, V.A., Tsvir, A.V., Belyaev, A.E., Konakova, R.V., Lyapin, V.G., Milenin, V.V., Soloviev, E.A., Venger, E.F., Voitsikhovskyi, D.I., Kholevchuk, V.V., Mitin, V.F.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2000
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/121166
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals / N.S. Boltovets, V.V. Basanets, V.N. Ivanov, V.A. Krivutsa, A.V.Tsvir, A.E. Belyaev, R.V. Konakova, V.G. Lyapin, V.V. Milenin, E.A. Soloviev, E.F. Venger, D.I. Voitsikhovskyi, V.V. Kholevchuk, V.F. Mitin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 359-370. — Бібліогр.: 8 назв. — англ.

We investigated the parameters of silicon and gallium arsenide microwave diodes intended for different functions. Their heat-resistant contacts were made on the base of interstitial phases. A unified technological route is proposed to produce microdiodes with bulk contacts. Tests of these silicon an...