Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals
We investigated the parameters of silicon and gallium arsenide microwave diodes intended for different functions. Their heat-resistant contacts were made on the base of interstitial phases. A unified technological route is proposed to produce microdiodes with bulk contacts. Tests of these silicon an...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2000 |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Zitieren: | Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals / N.S. Boltovets, V.V. Basanets, V.N. Ivanov, V.A. Krivutsa, A.V.Tsvir, A.E. Belyaev, R.V. Konakova, V.G. Lyapin, V.V. Milenin, E.A. Soloviev, E.F. Venger, D.I. Voitsikhovskyi, V.V. Kholevchuk, V.F. Mitin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 359-370. — Бібліогр.: 8 назв. — англ. |
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Boltovets, N.S. Basanets, V.V. Ivanov, V.N. Krivutsa, V.A. Tsvir, A.V. Belyaev, A.E. Konakova, R.V. Lyapin, V.G. Milenin, V.V. Soloviev, E.A. Venger, E.F. Voitsikhovskyi, D.I. Kholevchuk, V.V. Mitin, V.F. 2017-06-13T16:15:22Z 2017-06-13T16:15:22Z 2000 Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals / N.S. Boltovets, V.V. Basanets, V.N. Ivanov, V.A. Krivutsa, A.V.Tsvir, A.E. Belyaev, R.V. Konakova, V.G. Lyapin, V.V. Milenin, E.A. Soloviev, E.F. Venger, D.I. Voitsikhovskyi, V.V. Kholevchuk, V.F. Mitin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 359-370. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS: 07.07.D, 81.05.J, 85.30.K https://nasplib.isofts.kiev.ua/handle/123456789/121166 We investigated the parameters of silicon and gallium arsenide microwave diodes intended for different functions. Their heat-resistant contacts were made on the base of interstitial phases. A unified technological route is proposed to produce microdiodes with bulk contacts. Tests of these silicon and gallium arsenide microwave diodes in forced modes demonstrated their high heat stability. The development of varactor diodes and resonant tunneling diodes, as well as fast-operating switching diodes for the 33-78 GHz frequency range and IMPATT diodes for the 33-37 and 70-77 GHz frequency ranges, was carried out under the INCO-COPERNICUS Program (Project No 977131 "MEMSWAVE"). en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals |
| spellingShingle |
Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals Boltovets, N.S. Basanets, V.V. Ivanov, V.N. Krivutsa, V.A. Tsvir, A.V. Belyaev, A.E. Konakova, R.V. Lyapin, V.G. Milenin, V.V. Soloviev, E.A. Venger, E.F. Voitsikhovskyi, D.I. Kholevchuk, V.V. Mitin, V.F. |
| title_short |
Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals |
| title_full |
Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals |
| title_fullStr |
Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals |
| title_full_unstemmed |
Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals |
| title_sort |
microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals |
| author |
Boltovets, N.S. Basanets, V.V. Ivanov, V.N. Krivutsa, V.A. Tsvir, A.V. Belyaev, A.E. Konakova, R.V. Lyapin, V.G. Milenin, V.V. Soloviev, E.A. Venger, E.F. Voitsikhovskyi, D.I. Kholevchuk, V.V. Mitin, V.F. |
| author_facet |
Boltovets, N.S. Basanets, V.V. Ivanov, V.N. Krivutsa, V.A. Tsvir, A.V. Belyaev, A.E. Konakova, R.V. Lyapin, V.G. Milenin, V.V. Soloviev, E.A. Venger, E.F. Voitsikhovskyi, D.I. Kholevchuk, V.V. Mitin, V.F. |
| publishDate |
2000 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
We investigated the parameters of silicon and gallium arsenide microwave diodes intended for different functions. Their heat-resistant contacts were made on the base of interstitial phases. A unified technological route is proposed to produce microdiodes with bulk contacts. Tests of these silicon and gallium arsenide microwave diodes in forced modes demonstrated their high heat stability.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/121166 |
| citation_txt |
Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals / N.S. Boltovets, V.V. Basanets, V.N. Ivanov, V.A. Krivutsa, A.V.Tsvir, A.E. Belyaev, R.V. Konakova, V.G. Lyapin, V.V. Milenin, E.A. Soloviev, E.F. Venger, D.I. Voitsikhovskyi, V.V. Kholevchuk, V.F. Mitin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 359-370. — Бібліогр.: 8 назв. — англ. |
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