Hot wall growth and properties of lead telluride films doped by germanium and gallium

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2000
• Hauptverfasser: Lashkarev, G.V., Radchenko, M.V., Slynko, E.I., Vodopiyanov, V.N., Asotsky, V.V., Kaminsky, V.M., Beketov, G.V., Rengevich, E.V.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2000
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/121178
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Hot wall growth and properties of lead telluride films doped by germanium and gallium / G.V. Lashkarev, M.V. Radchenko, E.I. Slynko, V.N. Vodopiyanov, V.V. Asotsky, V.M. Kaminsky, G.V. Beketov, E.V. Rengevich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 295-299. — Бібліогр.: 13 назв. — англ.

The researches results of films (PbTe)₁₋y(GaTe)y and (Pb₁₋xGexTe)₁₋y(GaTe)y of n-type conductivity with carrier concentration within (2⋅10¹⁷÷9⋅10¹⁸) cm⁻³ are represented. The films were growth by modified hot wall technology on barium fluoride substrate. A state of films surface was investigated by...