APA (7th ed.) Citation

Lashkarev, G., Radchenko, M., Slynko, E., Vodopiyanov, V., Asotsky, V., Kaminsky, V., . . . Rengevich, E. (2000). Hot wall growth and properties of lead telluride films doped by germanium and gallium. Semiconductor Physics Quantum Electronics & Optoelectronics.

Chicago Style (17th ed.) Citation

Lashkarev, G.V, M.V Radchenko, E.I Slynko, V.N Vodopiyanov, V.V Asotsky, V.M Kaminsky, G.V Beketov, and E.V Rengevich. "Hot Wall Growth and Properties of Lead Telluride Films Doped by Germanium and Gallium." Semiconductor Physics Quantum Electronics & Optoelectronics 2000.

MLA (8th ed.) Citation

Lashkarev, G.V, et al. "Hot Wall Growth and Properties of Lead Telluride Films Doped by Germanium and Gallium." Semiconductor Physics Quantum Electronics & Optoelectronics, 2000.

Warning: These citations may not always be 100% accurate.