Lashkarev, G., Radchenko, M., Slynko, E., Vodopiyanov, V., Asotsky, V., Kaminsky, V., . . . Rengevich, E. (2000). Hot wall growth and properties of lead telluride films doped by germanium and gallium. Semiconductor Physics Quantum Electronics & Optoelectronics.
Chicago-Zitierstil (17. Ausg.)Lashkarev, G.V, M.V Radchenko, E.I Slynko, V.N Vodopiyanov, V.V Asotsky, V.M Kaminsky, G.V Beketov, und E.V Rengevich. "Hot Wall Growth and Properties of Lead Telluride Films Doped by Germanium and Gallium." Semiconductor Physics Quantum Electronics & Optoelectronics 2000.
MLA-Zitierstil (8. Ausg.)Lashkarev, G.V, et al. "Hot Wall Growth and Properties of Lead Telluride Films Doped by Germanium and Gallium." Semiconductor Physics Quantum Electronics & Optoelectronics, 2000.
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