Hot wall growth and properties of lead telluride films doped by germanium and gallium

Hot wall growth and properties of lead telluride films doped by germanium and gallium

The researches results of films (PbTe)₁₋y(GaTe)y and (Pb₁₋xGexTe)₁₋y(GaTe)y of n-type conductivity with carrier concentration within (2⋅10¹⁷÷9⋅10¹⁸) cm⁻³ are represented. The films were growth by modified hot wall technology on barium fluoride substrate. A state of films surface was investigated by...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2000
Hauptverfasser: Lashkarev, G.V., Radchenko, M.V., Slynko, E.I., Vodopiyanov, V.N., Asotsky, V.V., Kaminsky, V.M., Beketov, G.V., Rengevich, E.V.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2000
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/121178
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Hot wall growth and properties of lead telluride films doped by germanium and gallium / G.V. Lashkarev, M.V. Radchenko, E.I. Slynko, V.N. Vodopiyanov, V.V. Asotsky, V.M. Kaminsky, G.V. Beketov, E.V. Rengevich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 295-299. — Бібліогр.: 13 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-121178
record_format dspace
spelling Lashkarev, G.V.
Radchenko, M.V.
Slynko, E.I.
Vodopiyanov, V.N.
Asotsky, V.V.
Kaminsky, V.M.
Beketov, G.V.
Rengevich, E.V.
2017-06-13T16:31:28Z
2017-06-13T16:31:28Z
2000
Hot wall growth and properties of lead telluride films doped by germanium and gallium / G.V. Lashkarev, M.V. Radchenko, E.I. Slynko, V.N. Vodopiyanov, V.V. Asotsky, V.M. Kaminsky, G.V. Beketov, E.V. Rengevich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 295-299. — Бібліогр.: 13 назв. — англ.
1560-8034
PACS: 71.28, 71.55, 72.20.P, 72.20.M, 73.61.W
https://nasplib.isofts.kiev.ua/handle/123456789/121178
The researches results of films (PbTe)₁₋y(GaTe)y and (Pb₁₋xGexTe)₁₋y(GaTe)y of n-type conductivity with carrier concentration within (2⋅10¹⁷÷9⋅10¹⁸) cm⁻³ are represented. The films were growth by modified hot wall technology on barium fluoride substrate. A state of films surface was investigated by Atomic Force Microscope using both contact and taping modes. Hall coefficient, specific resistivity and thermoelectromotive force of films were measured in the temperature range 77-300 K. The investigation showed that the presence of germanium leads to an appearance of significant features on temperature dependencies of termoelectro-motive force which are connected with phase transition of displacement type. Doping gallium leads to n-type conductivity of films which increases with impurity concentration. The ionization energies of Ga impurities levels (n - exp(-E/2kT)) were within 3÷10 meV. The change of energy position and width of impurity level with increase of impurity concentration is established. The unusual protrusions on terraces of growth were discovered. The tops of protrusions can be considered as quantum dots. Inasmuch as composition of protrusions is expected to be distinguished from that of the terraces, they can create pieces of quantum wires.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Hot wall growth and properties of lead telluride films doped by germanium and gallium
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Hot wall growth and properties of lead telluride films doped by germanium and gallium
spellingShingle Hot wall growth and properties of lead telluride films doped by germanium and gallium
Lashkarev, G.V.
Radchenko, M.V.
Slynko, E.I.
Vodopiyanov, V.N.
Asotsky, V.V.
Kaminsky, V.M.
Beketov, G.V.
Rengevich, E.V.
title_short Hot wall growth and properties of lead telluride films doped by germanium and gallium
title_full Hot wall growth and properties of lead telluride films doped by germanium and gallium
title_fullStr Hot wall growth and properties of lead telluride films doped by germanium and gallium
title_full_unstemmed Hot wall growth and properties of lead telluride films doped by germanium and gallium
title_sort hot wall growth and properties of lead telluride films doped by germanium and gallium
author Lashkarev, G.V.
Radchenko, M.V.
Slynko, E.I.
Vodopiyanov, V.N.
Asotsky, V.V.
Kaminsky, V.M.
Beketov, G.V.
Rengevich, E.V.
author_facet Lashkarev, G.V.
Radchenko, M.V.
Slynko, E.I.
Vodopiyanov, V.N.
Asotsky, V.V.
Kaminsky, V.M.
Beketov, G.V.
Rengevich, E.V.
publishDate 2000
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description The researches results of films (PbTe)₁₋y(GaTe)y and (Pb₁₋xGexTe)₁₋y(GaTe)y of n-type conductivity with carrier concentration within (2⋅10¹⁷÷9⋅10¹⁸) cm⁻³ are represented. The films were growth by modified hot wall technology on barium fluoride substrate. A state of films surface was investigated by Atomic Force Microscope using both contact and taping modes. Hall coefficient, specific resistivity and thermoelectromotive force of films were measured in the temperature range 77-300 K. The investigation showed that the presence of germanium leads to an appearance of significant features on temperature dependencies of termoelectro-motive force which are connected with phase transition of displacement type. Doping gallium leads to n-type conductivity of films which increases with impurity concentration. The ionization energies of Ga impurities levels (n - exp(-E/2kT)) were within 3÷10 meV. The change of energy position and width of impurity level with increase of impurity concentration is established. The unusual protrusions on terraces of growth were discovered. The tops of protrusions can be considered as quantum dots. Inasmuch as composition of protrusions is expected to be distinguished from that of the terraces, they can create pieces of quantum wires.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/121178
citation_txt Hot wall growth and properties of lead telluride films doped by germanium and gallium / G.V. Lashkarev, M.V. Radchenko, E.I. Slynko, V.N. Vodopiyanov, V.V. Asotsky, V.M. Kaminsky, G.V. Beketov, E.V. Rengevich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 295-299. — Бібліогр.: 13 назв. — англ.
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