Paraelectric properties of PbTe doped with Ga
The static dielectric constant was investigated as a function of temperature and carrier concentration in In(Cu)/p-PbTe Schottky contacts. Single crystals of PbTe doped with Ga were used as substrates for preparation of the contacts. The static dielectric constant was found to obey the Curie-Weiss l...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2000 |
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/121179 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Paraelectric properties of PbTe doped with Ga / V. Tetyorkin, S. Movchan // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 300-303. — Бібліогр.: 21 назв. — англ. |