Paraelectric properties of PbTe doped with Ga
The static dielectric constant was investigated as a function of temperature and carrier concentration in In(Cu)/p-PbTe Schottky contacts. Single crystals of PbTe doped with Ga were used as substrates for preparation of the contacts. The static dielectric constant was found to obey the Curie-Weiss l...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2000 |
| Main Authors: | , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121179 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Paraelectric properties of PbTe doped with Ga / V. Tetyorkin, S. Movchan // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 300-303. — Бібліогр.: 21 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862731078605733888 |
|---|---|
| author | Tetyorkin, V. Movchan, S. |
| author_facet | Tetyorkin, V. Movchan, S. |
| citation_txt | Paraelectric properties of PbTe doped with Ga / V. Tetyorkin, S. Movchan // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 300-303. — Бібліогр.: 21 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The static dielectric constant was investigated as a function of temperature and carrier concentration in In(Cu)/p-PbTe Schottky contacts. Single crystals of PbTe doped with Ga were used as substrates for preparation of the contacts. The static dielectric constant was found to obey the Curie-Weiss law with the negative Curie temperature for all samples investigated including those ones with the lowest values of the hole concentration. There is an evidence that the Curie temperature is dependent on the compensation state in doped PbTe. The increase of the compensation results in nonmonotonous dependence of the Curie temperature on carrier concentration. The effect of the foreign impurities and native defects on the static dielectric constant and Curie temperature is discussed.
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| first_indexed | 2025-12-07T19:23:46Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-121179 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T19:23:46Z |
| publishDate | 2000 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Tetyorkin, V. Movchan, S. 2017-06-13T16:31:59Z 2017-06-13T16:31:59Z 2000 Paraelectric properties of PbTe doped with Ga / V. Tetyorkin, S. Movchan // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 300-303. — Бібліогр.: 21 назв. — англ. 1560-8034 PACS: 73.40.N, 77.22,78.20.C https://nasplib.isofts.kiev.ua/handle/123456789/121179 The static dielectric constant was investigated as a function of temperature and carrier concentration in In(Cu)/p-PbTe Schottky contacts. Single crystals of PbTe doped with Ga were used as substrates for preparation of the contacts. The static dielectric constant was found to obey the Curie-Weiss law with the negative Curie temperature for all samples investigated including those ones with the lowest values of the hole concentration. There is an evidence that the Curie temperature is dependent on the compensation state in doped PbTe. The increase of the compensation results in nonmonotonous dependence of the Curie temperature on carrier concentration. The effect of the foreign impurities and native defects on the static dielectric constant and Curie temperature is discussed. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Paraelectric properties of PbTe doped with Ga Article published earlier |
| spellingShingle | Paraelectric properties of PbTe doped with Ga Tetyorkin, V. Movchan, S. |
| title | Paraelectric properties of PbTe doped with Ga |
| title_full | Paraelectric properties of PbTe doped with Ga |
| title_fullStr | Paraelectric properties of PbTe doped with Ga |
| title_full_unstemmed | Paraelectric properties of PbTe doped with Ga |
| title_short | Paraelectric properties of PbTe doped with Ga |
| title_sort | paraelectric properties of pbte doped with ga |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121179 |
| work_keys_str_mv | AT tetyorkinv paraelectricpropertiesofpbtedopedwithga AT movchans paraelectricpropertiesofpbtedopedwithga |