The effect of doping methods on electrical properties and micromorphology of polysilicon gate electrode in submicron CMOS devices
Two doping methods for introducing phosphorus atoms into polysilicon to form a gate electrode for 0.5 mm CMOS were investigated. These methods were ion implantation and the ”in-situ” one (it is also known as thermal diffusion). For the in-situ method, the concentration of 1.8.10²⁰cm-³ for Si₂H₆ and...
Збережено в:
| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2002 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
|
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/121185 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | The effect of doping methods on electrical properties and micromorphology of polysilicon gate electrode in submicron CMOS devices / I. Ahmad, A. Omar, A. Mikdad // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 188-192. — Бібліогр.: 14 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862715976160641024 |
|---|---|
| author | Ahmad, I. Omar, A. Mikdad, A. |
| author_facet | Ahmad, I. Omar, A. Mikdad, A. |
| citation_txt | The effect of doping methods on electrical properties and micromorphology of polysilicon gate electrode in submicron CMOS devices / I. Ahmad, A. Omar, A. Mikdad // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 188-192. — Бібліогр.: 14 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Two doping methods for introducing phosphorus atoms into polysilicon to form a gate electrode for 0.5 mm CMOS were investigated. These methods were ion implantation and the ”in-situ” one (it is also known as thermal diffusion). For the in-situ method, the concentration of 1.8.10²⁰cm-³ for Si₂H₆ and phosphane (PH3) were used, in the course of ion implantation applying two different doses: 2.0.10¹⁶ and 3.10¹⁶cm-² at 40 keV. The micromorphology of the polysilicon surface was studied using the atomic force microscopy (AFM). The polysilicon thickness obtained via the in-situ method ranged between 12.35 and 26.08 nm, with an average value thickness of 18.0 nm, and its sheet resistance value was 21±1 ohm/square. As for the ion implantation method, at the lower doses the thickness ranged at about 12.00 upto 46.0 nm with an average value of 24.0 nm, and its sheet resistance values were of 36±13 and 45±21 ohm/square, respectively. At the higher doses, the thickness varied from 12.16 to 47.84 nm with an average meaning 23.96 nm, and its sheet resistance value was between 25 to 40 ohm/square. Therefore, polysilicon doped by the in-situ method has smoother and thinner surface and possesses better electrical properties.
|
| first_indexed | 2025-12-07T18:01:58Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121185 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T18:01:58Z |
| publishDate | 2002 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Ahmad, I. Omar, A. Mikdad, A. 2017-06-13T16:40:43Z 2017-06-13T16:40:43Z 2002 The effect of doping methods on electrical properties and micromorphology of polysilicon gate electrode in submicron CMOS devices / I. Ahmad, A. Omar, A. Mikdad // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 188-192. — Бібліогр.: 14 назв. — англ. 1560-8034 https://nasplib.isofts.kiev.ua/handle/123456789/121185 Two doping methods for introducing phosphorus atoms into polysilicon to form a gate electrode for 0.5 mm CMOS were investigated. These methods were ion implantation and the ”in-situ” one (it is also known as thermal diffusion). For the in-situ method, the concentration of 1.8.10²⁰cm-³ for Si₂H₆ and phosphane (PH3) were used, in the course of ion implantation applying two different doses: 2.0.10¹⁶ and 3.10¹⁶cm-² at 40 keV. The micromorphology of the polysilicon surface was studied using the atomic force microscopy (AFM). The polysilicon thickness obtained via the in-situ method ranged between 12.35 and 26.08 nm, with an average value thickness of 18.0 nm, and its sheet resistance value was 21±1 ohm/square. As for the ion implantation method, at the lower doses the thickness ranged at about 12.00 upto 46.0 nm with an average value of 24.0 nm, and its sheet resistance values were of 36±13 and 45±21 ohm/square, respectively. At the higher doses, the thickness varied from 12.16 to 47.84 nm with an average meaning 23.96 nm, and its sheet resistance value was between 25 to 40 ohm/square. Therefore, polysilicon doped by the in-situ method has smoother and thinner surface and possesses better electrical properties. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics The effect of doping methods on electrical properties and micromorphology of polysilicon gate electrode in submicron CMOS devices Article published earlier |
| spellingShingle | The effect of doping methods on electrical properties and micromorphology of polysilicon gate electrode in submicron CMOS devices Ahmad, I. Omar, A. Mikdad, A. |
| title | The effect of doping methods on electrical properties and micromorphology of polysilicon gate electrode in submicron CMOS devices |
| title_full | The effect of doping methods on electrical properties and micromorphology of polysilicon gate electrode in submicron CMOS devices |
| title_fullStr | The effect of doping methods on electrical properties and micromorphology of polysilicon gate electrode in submicron CMOS devices |
| title_full_unstemmed | The effect of doping methods on electrical properties and micromorphology of polysilicon gate electrode in submicron CMOS devices |
| title_short | The effect of doping methods on electrical properties and micromorphology of polysilicon gate electrode in submicron CMOS devices |
| title_sort | effect of doping methods on electrical properties and micromorphology of polysilicon gate electrode in submicron cmos devices |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121185 |
| work_keys_str_mv | AT ahmadi theeffectofdopingmethodsonelectricalpropertiesandmicromorphologyofpolysilicongateelectrodeinsubmicroncmosdevices AT omara theeffectofdopingmethodsonelectricalpropertiesandmicromorphologyofpolysilicongateelectrodeinsubmicroncmosdevices AT mikdada theeffectofdopingmethodsonelectricalpropertiesandmicromorphologyofpolysilicongateelectrodeinsubmicroncmosdevices AT ahmadi effectofdopingmethodsonelectricalpropertiesandmicromorphologyofpolysilicongateelectrodeinsubmicroncmosdevices AT omara effectofdopingmethodsonelectricalpropertiesandmicromorphologyofpolysilicongateelectrodeinsubmicroncmosdevices AT mikdada effectofdopingmethodsonelectricalpropertiesandmicromorphologyofpolysilicongateelectrodeinsubmicroncmosdevices |