Voids’ layer structures in silicon irradiated with high doses of high-energy helium ions
Structural and optical properties of single crystal silicon irradiated with 27.2 MeV helium ions by using fluences Ф ≥ 10¹⁶ ion/cm² were studied at various beam currents. It was found that at currents 0.25 to 0.45 μА, heavily damaged layers containing voids were formed in ion path in Si and behind...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2015 |
| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121198 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Voids’ layer structures in silicon irradiated with high doses of high-energy helium ions / M.I. Starchyk, L.S. Marchenko, M.B. Pinkovska, G.G. Shmatko, V.I. Varnina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 292-296. — Бібліогр.: 11 назв. — англ. |