Voids’ layer structures in silicon irradiated with high doses of high-energy helium ions

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2015
• Автори: Starchyk, M.I., Marchenko, L.S., Pinkovska, M.B., Shmatko, G.G., Varnina, V.I.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2015
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/121198
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Voids’ layer structures in silicon irradiated with high doses of high-energy helium ions / M.I. Starchyk, L.S. Marchenko, M.B. Pinkovska, G.G. Shmatko, V.I. Varnina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 292-296. — Бібліогр.: 11 назв. — англ.

Structural and optical properties of single crystal silicon irradiated with 27.2 MeV helium ions by using fluences Ф ≥ 10¹⁶ ion/cm² were studied at various beam currents. It was found that at currents 0.25 to 0.45 μА, heavily damaged layers containing voids were formed in ion path in Si and behind...