Degradation of electrooptical characteristics of serial GaP light-emitting diodes, caused by fast electrons

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2015
• Автори: Konoreva, O.V., Lytovchenko, M.V., Malyi, Ye.V., Petrenko, I.V., Pinkovska, M.B., Tartachnyk, V.P., Shlapatska, V.V.
• Формат: Стаття
• Мова: English
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2015
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/121204
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Degradation of electrooptical characteristics of serial GaP light-emitting diodes, caused by fast electrons / O.V. Konoreva, M.V. Lytovchenko, Ye.V. Malyi, I.V. Petrenko, M.B. Pinkovska, V.P. Tartachnyk, V.V. Shlapatska // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 312-316. — Бібліогр.: 11 назв. — англ.

The study of electrical and optical characteristics of GaP LEDs irradiated with electrons (E = 2 MeV, Ф = 0…10¹⁵ cm⁻²) was performed. Especial interest was focused on appearing of S-type instability in current-voltage characteristics and its mechanism in accord with the model by K. Maeda. Made in th...