Structural changes in molten CdTe
Shear viscosity (h) measurements of CdTe and CdTe + 2 at% In melts were performed using a cup viscometer up to 1403 K. The h(T) dependencies obtained during slow heating and cooling (Vh/c = = 10-15 K/h) show hysteresys near a melting point. According to the η(T) dependencies data drastic changes the...
Saved in:
| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2000 |
| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
|
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121214 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Structural changes in molten CdTe / L. Shcherbak, P. Feychuk, Yu. Plevachuk, Ch. Dong, V. Sklyarchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 4. — С. 456-459. — Бібліогр.: 20 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-121214 |
|---|---|
| record_format |
dspace |
| spelling |
Shcherbak, L. Feychuk, P. Plevachuk, Yu. Dong, Ch. Sklyarchuk, V. 2017-06-13T16:54:12Z 2017-06-13T16:54:12Z 2000 Structural changes in molten CdTe / L. Shcherbak, P. Feychuk, Yu. Plevachuk, Ch. Dong, V. Sklyarchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 4. — С. 456-459. — Бібліогр.: 20 назв. — англ. 1560-8034 PACS: 61.43.D, 64.70.D,66.20 https://nasplib.isofts.kiev.ua/handle/123456789/121214 Shear viscosity (h) measurements of CdTe and CdTe + 2 at% In melts were performed using a cup viscometer up to 1403 K. The h(T) dependencies obtained during slow heating and cooling (Vh/c = = 10-15 K/h) show hysteresys near a melting point. According to the η(T) dependencies data drastic changes the melts structure occurred at 1376 K both during the heating and cooling of the melts. The authors are very grateful to Prof. Suck and Prof. O.E. Panchuk for the initiation of this work. The work is supported in part by European Union Grant «Coper-nicus» ERBIC 15 CT 960808. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Structural changes in molten CdTe Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Structural changes in molten CdTe |
| spellingShingle |
Structural changes in molten CdTe Shcherbak, L. Feychuk, P. Plevachuk, Yu. Dong, Ch. Sklyarchuk, V. |
| title_short |
Structural changes in molten CdTe |
| title_full |
Structural changes in molten CdTe |
| title_fullStr |
Structural changes in molten CdTe |
| title_full_unstemmed |
Structural changes in molten CdTe |
| title_sort |
structural changes in molten cdte |
| author |
Shcherbak, L. Feychuk, P. Plevachuk, Yu. Dong, Ch. Sklyarchuk, V. |
| author_facet |
Shcherbak, L. Feychuk, P. Plevachuk, Yu. Dong, Ch. Sklyarchuk, V. |
| publishDate |
2000 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Shear viscosity (h) measurements of CdTe and CdTe + 2 at% In melts were performed using a cup viscometer up to 1403 K. The h(T) dependencies obtained during slow heating and cooling (Vh/c = = 10-15 K/h) show hysteresys near a melting point. According to the η(T) dependencies data drastic changes the melts structure occurred at 1376 K both during the heating and cooling of the melts.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/121214 |
| citation_txt |
Structural changes in molten CdTe / L. Shcherbak, P. Feychuk, Yu. Plevachuk, Ch. Dong, V. Sklyarchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 4. — С. 456-459. — Бібліогр.: 20 назв. — англ. |
| work_keys_str_mv |
AT shcherbakl structuralchangesinmoltencdte AT feychukp structuralchangesinmoltencdte AT plevachukyu structuralchangesinmoltencdte AT dongch structuralchangesinmoltencdte AT sklyarchukv structuralchangesinmoltencdte |
| first_indexed |
2025-11-30T10:07:53Z |
| last_indexed |
2025-11-30T10:07:53Z |
| _version_ |
1850857342204116992 |