Baranskyy, P., Gaydar, G., & Litovchenko, P. (2002). Influence of the annealing of silicon crystals at 1200 °C on the Hall effect and magnetoresistance. Semiconductor Physics Quantum Electronics & Optoelectronics.
Chicago-Zitierstil (17. Ausg.)Baranskyy, P.I, G.P Gaydar, und P.G Litovchenko. "Influence of the Annealing of Silicon Crystals at 1200 °C on the Hall Effect and Magnetoresistance." Semiconductor Physics Quantum Electronics & Optoelectronics 2002.
MLA-Zitierstil (8. Ausg.)Baranskyy, P.I, et al. "Influence of the Annealing of Silicon Crystals at 1200 °C on the Hall Effect and Magnetoresistance." Semiconductor Physics Quantum Electronics & Optoelectronics, 2002.
Achtung: Diese Zitate sind unter Umständen nicht zu 100% korrekt.