APA (7th ed.) Citation

Baranskyy, P., Gaydar, G., & Litovchenko, P. (2002). Influence of the annealing of silicon crystals at 1200 °C on the Hall effect and magnetoresistance. Semiconductor Physics Quantum Electronics & Optoelectronics.

Chicago Style (17th ed.) Citation

Baranskyy, P.I, G.P Gaydar, and P.G Litovchenko. "Influence of the Annealing of Silicon Crystals at 1200 °C on the Hall Effect and Magnetoresistance." Semiconductor Physics Quantum Electronics & Optoelectronics 2002.

MLA (8th ed.) Citation

Baranskyy, P.I, et al. "Influence of the Annealing of Silicon Crystals at 1200 °C on the Hall Effect and Magnetoresistance." Semiconductor Physics Quantum Electronics & Optoelectronics, 2002.

Warning: These citations may not always be 100% accurate.