Influence of the annealing of silicon crystals at 1200 °C on the Hall effect and magnetoresistance

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2002
• Hauptverfasser: Baranskyy, P.I., Gaydar, G.P., Litovchenko, P.G.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2002
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/121238
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Influence of the annealing of silicon crystals at 1200 °C on the Hall effect and magnetoresistance / P.I. Baranskyy, G.P. Gaydar, P.G. Litovchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 3. — С. 231-234. — Бібліогр.: 15 назв. — англ.

The influence of the annealing (at Тanneal. = 1200 °C) and different rates of cooling (from Тanneal. to room temperature) on magnetoresistance and Hall effect of the n-Si:P monocrystals with different specific resistance, which were grown by means of various technologies, have been investigated. It means that investigated crystals had different concentrations of not only doping impurity (phosphorus) but also background impurity (oxygen atoms) in their bulk, too. It was shown that the impurity complexes (clusters) of (SiO)x, (SiO₂)х or SixOy types that arise in n-Si monocrystals with increased oxygen concentrations at annealing (Тanneal. = 1200 °C) results in essential increase of magnetoresistance (approximately 2...2.5 times as much). The influence of mentioned above clusters on the magnetoresistance practically excludes its saturation in classically strong magnetic fields and forms the dependence of on magnetic field H in this region in the following form .