Influence of the annealing of silicon crystals at 1200 °C on the Hall effect and magnetoresistance

Influence of the annealing of silicon crystals at 1200 °C on the Hall effect and magnetoresistance

The influence of the annealing (at Тanneal. = 1200 °C) and different rates of cooling (from Тanneal. to room temperature) on magnetoresistance and Hall effect of the n-Si:P monocrystals with different specific resistance, which were grown by means of various technologies, have been investigated. It...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2002
Hauptverfasser: Baranskyy, P.I., Gaydar, G.P., Litovchenko, P.G.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2002
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/121238
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Influence of the annealing of silicon crystals at 1200 °C on the Hall effect and magnetoresistance / P.I. Baranskyy, G.P. Gaydar, P.G. Litovchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 3. — С. 231-234. — Бібліогр.: 15 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-121238
record_format dspace
spelling Baranskyy, P.I.
Gaydar, G.P.
Litovchenko, P.G.
2017-06-13T17:16:48Z
2017-06-13T17:16:48Z
2002
Influence of the annealing of silicon crystals at 1200 °C on the Hall effect and magnetoresistance / P.I. Baranskyy, G.P. Gaydar, P.G. Litovchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 3. — С. 231-234. — Бібліогр.: 15 назв. — англ.
1560-8034
PACS: 61.72.C; 72.20.My
https://nasplib.isofts.kiev.ua/handle/123456789/121238
The influence of the annealing (at Тanneal. = 1200 °C) and different rates of cooling (from Тanneal. to room temperature) on magnetoresistance and Hall effect of the n-Si:P monocrystals with different specific resistance, which were grown by means of various technologies, have been investigated. It means that investigated crystals had different concentrations of not only doping impurity (phosphorus) but also background impurity (oxygen atoms) in their bulk, too. It was shown that the impurity complexes (clusters) of (SiO)x, (SiO₂)х or SixOy types that arise in n-Si monocrystals with increased oxygen concentrations at annealing (Тanneal. = 1200 °C) results in essential increase of magnetoresistance (approximately 2...2.5 times as much). The influence of mentioned above clusters on the magnetoresistance practically excludes its saturation in classically strong magnetic fields and forms the dependence of on magnetic field H in this region in the following form .
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Influence of the annealing of silicon crystals at 1200 °C on the Hall effect and magnetoresistance
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Influence of the annealing of silicon crystals at 1200 °C on the Hall effect and magnetoresistance
spellingShingle Influence of the annealing of silicon crystals at 1200 °C on the Hall effect and magnetoresistance
Baranskyy, P.I.
Gaydar, G.P.
Litovchenko, P.G.
title_short Influence of the annealing of silicon crystals at 1200 °C on the Hall effect and magnetoresistance
title_full Influence of the annealing of silicon crystals at 1200 °C on the Hall effect and magnetoresistance
title_fullStr Influence of the annealing of silicon crystals at 1200 °C on the Hall effect and magnetoresistance
title_full_unstemmed Influence of the annealing of silicon crystals at 1200 °C on the Hall effect and magnetoresistance
title_sort influence of the annealing of silicon crystals at 1200 °c on the hall effect and magnetoresistance
author Baranskyy, P.I.
Gaydar, G.P.
Litovchenko, P.G.
author_facet Baranskyy, P.I.
Gaydar, G.P.
Litovchenko, P.G.
publishDate 2002
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description The influence of the annealing (at Тanneal. = 1200 °C) and different rates of cooling (from Тanneal. to room temperature) on magnetoresistance and Hall effect of the n-Si:P monocrystals with different specific resistance, which were grown by means of various technologies, have been investigated. It means that investigated crystals had different concentrations of not only doping impurity (phosphorus) but also background impurity (oxygen atoms) in their bulk, too. It was shown that the impurity complexes (clusters) of (SiO)x, (SiO₂)х or SixOy types that arise in n-Si monocrystals with increased oxygen concentrations at annealing (Тanneal. = 1200 °C) results in essential increase of magnetoresistance (approximately 2...2.5 times as much). The influence of mentioned above clusters on the magnetoresistance practically excludes its saturation in classically strong magnetic fields and forms the dependence of on magnetic field H in this region in the following form .
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/121238
citation_txt Influence of the annealing of silicon crystals at 1200 °C on the Hall effect and magnetoresistance / P.I. Baranskyy, G.P. Gaydar, P.G. Litovchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 3. — С. 231-234. — Бібліогр.: 15 назв. — англ.
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AT litovchenkopg influenceoftheannealingofsiliconcrystalsat1200conthehalleffectandmagnetoresistance
first_indexed 2025-12-07T18:38:59Z
last_indexed 2025-12-07T18:38:59Z
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