Plasmon-enhanced fluorometry based on gold nanostructure arrays. Method and device
In this work, we describe a method of surface-enhanced fluorometry, based on the phenomenon of localized surface plasmon resonance in unordered gold nanostructure arrays. The theoretical approach for the model system “gold nanoparticle-dielectric spacer” in the electrostatic approximation by solutio...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2015 |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
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| Цитувати: | Plasmon-enhanced fluorometry based on gold nanostructure arrays. Method and device / V.I. Chegel, V.K. Lytvyn, A.M. Lopatynskyi, P.E. Shepeliavyi, O.S. Lytvyn, Yu.V. Goltvyanskyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 272-278. — Бібліогр.: 37 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1859807132858187776 |
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| author | Chegel, V.I. Lytvyn, V.K. Lopatynskyi, A.M. Shepeliavyi, P.E. Lytvyn, O.S. Goltvyanskyi, Yu.V. |
| author_facet | Chegel, V.I. Lytvyn, V.K. Lopatynskyi, A.M. Shepeliavyi, P.E. Lytvyn, O.S. Goltvyanskyi, Yu.V. |
| citation_txt | Plasmon-enhanced fluorometry based on gold nanostructure arrays. Method and device / V.I. Chegel, V.K. Lytvyn, A.M. Lopatynskyi, P.E. Shepeliavyi, O.S. Lytvyn, Yu.V. Goltvyanskyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 272-278. — Бібліогр.: 37 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | In this work, we describe a method of surface-enhanced fluorometry, based on the phenomenon of localized surface plasmon resonance in unordered gold nanostructure arrays. The theoretical approach for the model system “gold nanoparticle-dielectric spacer” in the electrostatic approximation by solution of Laplace’s equation is considered. The developed technology for manufacturing the plasmonic substrates as well as design of the novel laser-based compact fluorometer are presented. The arrays of gold nanostructures on solid substrates (nanochips) coated with different thicknesses of SiO₂ were developed and fabricated by thermal annealing of gold island films with subsequent dielectric spacer deposition. As an example for verification of the proposed method, the fluorescence properties of the system “gold nanostructures array – SiO₂ dielectric coating – Rhodamine 6G” were studied. It has been shown that enhancement of dye emission up to 22 times for dielectric coating with the thickness of about 20 nm is possible. Presented method is of importance for the development of the novel nanoscale sensors, biomolecular assays and nanoplasmonic devices.
|
| first_indexed | 2025-12-07T15:16:56Z |
| format | Article |
| fulltext |
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015. V. 18, N 3. P. 272-278.
doi: 10.15407/spqeo18.03.272
© 2015, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
272
PACS 33.50.Dq, 73.20.Mf
Plasmon-enhanced fluorometry based on gold nanostructure arrays.
Method and device
V.I. Chegel, V.K. Lytvyn, A.M. Lopatynskyi, P.E. Shepeliavyi, O.S. Lytvyn, Yu.V. Goltvyanskyi
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine,
41, prospect Nauky, 03028 Kyiv, Ukraine;
Phone: +38 (044) 525-56-26, e-mail: vche111@yahoo.com, lop2000@ukr.net, lytvet@ukr.net
Abstract. In this work, we describe a method of surface-enhanced fluorometry, based on
the phenomenon of localized surface plasmon resonance in unordered gold nanostructure
arrays. The theoretical approach for the model system “gold nanoparticle-dielectric
spacer” in the electrostatic approximation by solution of Laplace’s equation is
considered. The developed technology for manufacturing the plasmonic substrates as
well as design of the novel laser-based compact fluorometer are presented. The arrays of
gold nanostructures on solid substrates (nanochips) coated with different thicknesses of
SiO2 were developed and fabricated by thermal annealing of gold island films with
subsequent dielectric spacer deposition. As an example for verification of the proposed
method, the fluorescence properties of the system “gold nanostructures array – SiO2
dielectric coating – Rhodamine 6G” were studied. It has been shown that enhancement of
dye emission up to 22 times for dielectric coating with the thickness of about 20 nm is
possible. Presented method is of importance for the development of the novel nanoscale
sensors, biomolecular assays and nanoplasmonic devices.
Keywords: localized surface plasmon resonance, plasmonic nanostructures, plasmon-
enhanced fluorescence, rhodamine 6G.
Manuscript received 03.03.15; revised version received 16.06.15; accepted for
publication 03.09.15; published online 30.09.15.
1. Introduction
Today, the number of works related to the investigation
of fluorescence, one of the most subtle and complicated
optical phenomena, is increasing rapidly. This is caused
by the prospects for using fluorescence as a basis of
rapid methods for detection and identification of
chemical and biological substances. Fluorescence is one
of the most widely used methods in biochemistry [1],
clinical testing [2] and cellular imaging [3]. The
capabilities of fluorescence technology are now
exploited for quantitative and qualitative analysis and for
biological research in general [4]. For example, structure
of cells and their organelles, ion fluxes in cells and
membrane processes have been investigated with
application of fluorescent probes [5]. Additionally,
fluorescence methods are being increasingly used for
studies of conformational changes of biomolecules and
specific interactions between them [6]. Fluorescence
technique can also be an effective tool in development of
new medical treatments [7] and drug delivery methods
[8]. A large number of studies using fluorescence
methods in biochemistry and molecular biology have
been focused on using dyes to visualize individual
components of biological systems [9, 10].
Many researches reported on the phenomenon of
plasmon-enhanced fluorescence (PEF), which is induced
by localized surface plasmon resonance (LSPR) that
appears in high-conductive metal (plasmonic)
nanostructures (PN) [11] and can significantly increase
the emission of fluorophore [12, 13]. In particular, a
large change in light emission of fluorescent molecule
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015. V. 18, N 3. P. 272-278.
doi: 10.15407/spqeo18.03.272
© 2015, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
273
located near PN is caused by high electromagnetic field
around gold and silver PN under LSPR conditions [14].
A number of active structures have been developed for
PEF, primarily based on silver colloids [15, 16], silver
and gold island films [17, 18], and ordered noble metal
nanoparticle arrays [19].
In order to observe PEF, fluorescent molecule
should be located near to the LSPR-generating surface,
i.e. in the PN near-field zone [20]. However, very close
disposition of fluorophore and PN leads to fluorescence
quenching caused by the energy transfer from the
excited molecule to the metallic surface [21]. Common
approach reported in literature to overcome this issue is
to hold the fluorophore away from a nanostructured
surface at an optimal distance by a dielectric coating,
which provides stable PEF conditions [22]. Another
approach depends on preparation of the complex: PN –
chemical linker – biomolecule – dye, which provides the
required distance from dye to nanoparticle [23]. These
techniques make it possible to obtain up to 50-fold
fluorescence enhancement [24].
In this paper, we describe the method for plasmon-
enhanced fluorometry and technology for producing
gold nanochips aimed at in-practice realization of the
enhancement mechanism. Presented here are the
experimental results of studying the enhanced
fluorescence signal of organic dye Rhodamine 6G (R6G)
located at different distances from gold nanostructures,
which was realized by using SiO2 dielectric coatings. We
also report on the application of developed and patented
by authors [25] compact laser-based fluorometer
“FluorotestNano” to detect the enhanced fluorescence
emission of the dye using the above-mentioned method.
We believe that presented methodology will contribute
to the ongoing search for the combination of
fluorescence spectroscopy methods, nanoplasmonics and
nanotechnology in order to establish the possibilities of
plasmon-enhanced fluorescence towards building highly
efficient PEF-sensors.
2. Theory and modeling
The relationship between the plasmon-induced
electromagnetic near-field of a metal nanostructure and
properties of the adjacent dye has been previously
studied in [26]. The fluorophore emission was
demonstrated to change dramatically when it is placed
on the different distances within PN, depending on the
electric field. There are multiple factors that affect the
molecule fluorescence signal: type of material, size and
shape of the nanostructure, type of material and
thickness of the nanoparticle coating, incident and
emitted light wavelengths and intrinsic quantum yield of
the fluorophore [27]. At the present time, scientists agree
that there are two main factors affecting the fluorescence
changes by plasmonic nanostructures. First of them is
the plasmon field generated around PN by the incident
light that, depending on wavelength, can enhance the
excitation of the fluorophore, which, in turn, determines
the level of fluorescence emission. The second one is the
PN-fluorophore interaction that reduces the ratio of
radiative to non-radiative decay rate and, depending on
the presence of the dielectric layer, influences the
quantum yield of the fluorophore, resulting in
fluorescence quenching [28].
Several mathematical models have been developed
to describe the plasmon electric field around PN
[20, 29], including an approach considering dielectric-
coated PN [27], which is of special importance for PEF
modeling. It is based on the electrostatic approximation
by solution of Laplace’s equation with the boundary
conditions appropriate to the selected model [29] and
takes into account only the dipole plasmon mode excited
in spherical PN (Fig. 1).
The model shown in Fig. 1 uses the spherical
coordinate system. According to this simplified
approach [27], where the system has an azimuthal
symmetry 0=⎟⎟
⎠
⎞
⎜⎜
⎝
⎛
φd
dE p , plasmon electric field (Ep) at an
observation point r, which is generated by the incident
light (E0) in the vicinity of PN (with a radius r1) coated
with a dielectric shell (with thickness r2–r1), can be
described by the following equation
( )
( ) ,θsin1
εε2εε
εεεε
θcos1
εε2εε
εεεε2
θ0
3
2
32
32
0
3
2
32
32
eE
r
r
eE
r
rE
ba
ba
r
ba
ba
p
rr
rrr
⋅⋅⋅
⎥
⎥
⎦
⎤
⎢
⎢
⎣
⎡
+⎟
⎠
⎞
⎜
⎝
⎛⋅
+
−
+
+⋅⋅⋅
⎥
⎥
⎦
⎤
⎢
⎢
⎣
⎡
+⎟
⎠
⎞
⎜
⎝
⎛⋅
+
−
=
and the electric field inside the shell ( layer
pE
r
) is
( ) ( )
( )
( ) ( )
( ) ,θsin
εε2εε
εε2ε2εε3
θcos
2
εε2ε2εε3
θ0
32
3
2
21213
0
32
3
2
21213
eE
r
r
eE
r
r
E
ba
r
ba
layer
p
rr
rr
r
⋅⋅×
×
+
⎥
⎥
⎦
⎤
⎢
⎢
⎣
⎡
⎟
⎠
⎞
⎜
⎝
⎛⋅−−+
−⋅⋅×
×
εε+εε
⎥
⎥
⎦
⎤
⎢
⎢
⎣
⎡
⎟
⎠
⎞
⎜
⎝
⎛⋅−++
=
Fig. 1. Model of a dielectric-coated spherical PN placed in
surrounding medium with a coordinate system used for the
presentation of plasmon electric field.
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015. V. 18, N 3. P. 272-278.
doi: 10.15407/spqeo18.03.272
© 2015, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
274
where re
r
, θe
r
are the unit vectors in r and θ directions of
the spherical coordinates, respectively,
( ) ( )
,1
,3εεε,ε223εε
3
2
1
2121
⎟⎟
⎠
⎞
⎜⎜
⎝
⎛
−=
−+=+−=
r
rP
PPPP ba
ε1, ε2, ε3 and ε0 are the dielectric permittivity values of
PN, shell, outer surrounding medium and vacuum,
respectively. For PN, ε1 is wavelength- and size-
dependent and can be described by the Drude-Lorentz
model [30]:
( )
⎟
⎟
⎠
⎞
⎜
⎜
⎝
⎛
ωγ+ω−ω
ω+
ωγ+ω
ω−ε=ωε
b
p
f
p ii 22
0
2
2
2
01
111 ,
where ω is the angular frequency of the incident light,
ω0 – bound electron resonant frequency, ωp – plasma
frequency,
bbfff rv τ=γ+τ=τ=γ 1,11 10 ,
where τf and τb are the free electron relaxation time and
bound electron decay time, respectively, vf is the Fermi
velocity and τ0 – free electron scattering time for the
bulk material.
Quantum yield q indirectly influenced by the
plasmon field Ep [27] can be described as
0
0
00
0
0 1
q
qq
q
r
abs
r
r
r
r
−
+
γ
γ
+
γ
γ
γ
γ
= ,
where rγ and 0
rγ are the radiative decay rates in the
presence and absence of PN, respectively, absγ is the
non-radiative decay rate resulting from the energy
absorbed by PN [31], and q0 – intrinsic quantum yield of
the fluorophore.
Therefore, fluorescence emission enhancement (Ф)
is the combined effect of the excitation rate enhancement
and quantum yield change, both influenced by the
plasmon field, and it can be described as
0
2
0 q
q
E
E p
⎟⎟
⎠
⎞
⎜⎜
⎝
⎛
=Φ .
The electric field intensity near the 100-nm-
diameter spherical gold nanoparticle with a 20-nm-thick
SiO2 shell has been calculated using the above-
mentioned theoretical approach implemented in the
MathCAD software. The results of simulation are
presented in Fig. 2 as the spectral distribution of average
electric field intensity enhancement in the 3-nm vicinity
around the spherical gold nanoparticle with a coating,
where fluorophore molecules can reside. This system
exhibits the enhancement of incident electric field
intensity up to approximately 18 times with a maximum
enhancement at the wavelength of 542 nm.
Fig. 2. Simulated spectral distribution of average electric field
intensity enhancement in the 3-nm vicinity around the 100-nm-
diameter spherical gold nanoparticle with a 20-nm-thick SiO2
shell.
3. Sample preparation
Microscope glass slides (13×25 mm) were used as
substrates. Before metal film deposition, substrates were
cleaned in the ultrasonic bath with surfactant, then
treated in “piranha solution” for 30 min (caution this
mixture is potentially explosive and it will became very
hot), triply rinsed with a copious amount of deionized
water and finally dried using N2 flow.
Gold island film fabrication and SiO2 coating were
carried out by thermal vacuum evaporation method
using the UVN-2M setup (pressure Pa10 3− ) with
deposition speed of about 0.11 to 0.14 nm/s. The mass
thickness of gold island film of about 10 nm was chosen
as the value that allows to obtain the separated well-
defined nanostructures after annealing (450 °C, 2 hours
in air atmosphere). To prepare the dielectric coating,
SiO2 layers with a thickness of 10 to 25 nm in 5-nm
steps were deposited. Resulting structures (i.e. PN with
the dielectric coating) were covered with fluorescent
organic dye R6G by dipping them for 30 s into R6G
aqueous solution with the dye concentration of
mol/L10 5− and subsequent drying under room
conditions. The presence of R6G layer on glass or SiO2
surface was provided by opposite charges of SiO2 and
R6G in aqueous solution [32, 34].
4. Experimental methods
Absorbance spectra of gold island films, PN without
coating and PN with SiO2 coating were measured using
LSPR spectrometer “NanoPLASMON-003” [34].
Atomic force microscopy (AFM) measurements of
nanochip samples were carried out on atomic force
microscope NanoScope IIIa Dimension 3000. Developed
by the authors portable laser-based fluorometer
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015. V. 18, N 3. P. 272-278.
doi: 10.15407/spqeo18.03.272
© 2015, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
275
“FluorotestNano” was used for steady-state fluorescence
measurements (see schematic measurement setup and
common view of the device in Fig. 3). The device has
three built-in laser light sources (405, 532, 650 nm) and
four LEDs (360, 470, 535, 632 nm) that allows working
both with nanochips and solutions in photometric
cuvettes.
Fluorescence measurements of R6G layers on PN
were carried out with the 532-nm green laser used as an
excitation light source. The measurement scheme for
fluorescence spectroscopy based on right-angle
geometry with the 540-nm cut-off interference filter is
depicted in Fig. 4. The simplified scheme of gold PN
with the SiO2 dielectric coating, which provides
fluorescence signal enhancement for the adjacent dye
molecule, is shown in Fig. 4. The distance between the
fluorophore molecules and PN was determined by the
thickness of the dielectric SiO2 coating deposited on PN.
5. Results and discussion
The top view AFM image of the gold island film produ-
ced according to the protocol described in Section 3 is
shown in Fig. 5a. AFM measurements demonstrate that
the maximal mass thickness of island film is about 12 nm,
which is close to the value specified in the fabrication
protocol. Gold PN (Fig. 5b) after the thermal annealing
of gold island film exhibit the shape of semi-ellipsoids
with a height and an equivalent radius distributed within
the ranges of 30…80 nm and 20…100 nm, respectively.
The average height of PN is about 60 nm and the
average equivalent radius is close to 50 nm.
Typical absorbance spectra of bare gold PN and
gold PN with SiO2 coating of a different thickness
(10…25 nm) measured in air are shown in Fig. 6. All
spectra reveal expressed plasmonic peak at 550 nm (for
bare PN) and 580…610 nm (for covered PN). The
observed LSPR position red shift accompanying the
dielectric coating thickness increase confirms the
plasmonic nature of registered absorbance peak [35].
a) b)
Fig. 3. (a) Schematic of experimental setup for plasmon-enhanced fluorescence measurements. 1, 5, 6 – lenses, 2 – nanochip,
3 – sample holder, 4 – longpass filter, 7 – mirror. (b) Photo of the “FluorotestNano” device.
Fig. 4. Measurement scheme for R6G plasmon-enhanced fluorescence detection near gold PN with SiO2 dielectric coating.
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015. V. 18, N 3. P. 272-278.
doi: 10.15407/spqeo18.03.272
© 2015, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
276
a) b)
Fig. 5. Top view AFM images of (а) gold island film and (b) gold PN.
Fig. 6. Absorbance spectra of bare gold PN and gold PN with
SiO2 dielectric coating having the thickness within the range of
10…25 nm.
All the studied PN samples covered with SiO2/dye
exhibit R6G fluorescence enhancement in comparison
with the signal obtained from similar samples without
PN (Fig. 7a). At the same time, the relationship between
the intensity of fluorescent signal and SiO2 thickness is
evidently nonlinear with a distinct peak. Namely,
maximum R6G fluorescence was obtained for the
sample with a 20-nm-thick SiO2 coating. Fig. 7b shows
the fluorescence enhancement factor dependence on the
thickness of dielectric coating, which exhibits the bell-
shaped character. Here, enhancement factor is estimated
as a ratio of R6G fluorescence intensities for gold PN
with SiO2 shell and bare glass substrate near maximum
emission wavelength (548 nm). Small blue-shift of R6G
emission with respect to tabular value can be explained
by presence of silicon oxide shell near the dye, which
changes the dielectric environment of R6G [36].
a) b)
Fig. 7. (а) Fluorescence spectra of R6G dye placed on the surface of gold PN coated with SiO2 layer of various thicknesses.
(b) R6G fluorescence enhancement factor dependence on the SiO2 thickness.
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015. V. 18, N 3. P. 272-278.
doi: 10.15407/spqeo18.03.272
© 2015, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
277
It is of importance that the enhanced signal was
observed only if the proximity of wavelengths of PN
LSPR, dye emission and dye excitation has been
provided, which is in agreement with well-known
phenomenon of emission enhancement by strong electric
field generated by PN under LSPR conditions [37]. The
observed increase of dye emission using the proposed
nanochips opens the possibility to provide plasmon-
enhanced fluorescence for flow mode real-time
measurements with low analyte consumption. The expe-
rimental results of R6G fluorescence enhancement close
to 22 times, obtained on the fabricated nanochips with
20-nm SiO2 coating, are in agreement with the results of
modeling. It should be noted that the measured and
calculated absorbance spectra of PN have some
difference in the wavelength positions. This disagree-
ment can be attributed to the presence of the dielectric
substrate and the different sizes and shape of PN on the
real nanochip. In particular, nanoparticles on the nano-
chip have rather semi-ellipsoid, not a spherical shape.
Disagreement in enhancement values obtained in the
model and the experimental data can also be caused by a
simplified model “nanoparticle – dielectric coating –
dye”. In the applied model, the quantum yield of the dye
that affects the value of the energy transfer between the
LSPR nanoparticle and dye molecules has not been
considered, as well as interaction between nanostruc-
tures in array, this will be the part of our future work.
6. Conclusions
The method of fluorescence signal enhancement based
on exploitation of plasmon-supporting nanochips was
developed, which provides up to 22-fold emission
enhancement for Rhodamine 6G. The relevant
experimental studies have been carried out on the novel
laser-based fluorometer “FluorotestNano” that provides
plasmonic control of fluorescence signal in the visible
spectral region. Nanochips for plasmon-enhanced
fluorescence based on gold nanostructures with
dielectric coating of different thickness were designed
and fabricated by thermal annealing of gold island films
with subsequent SiO2 layer deposition. As a result of
R6G fluorescence intensity measurements for different
thicknesses of dielectric spacer, the optimal distance
between dye molecules and plasmonic nanostructures
providing a dominance of fluorescence enhancement
over quenching was found. The obtained results
demonstrate that the creation of “gold nanostructure –
dielectric spacer – fluorophore” system with precisely
tailored optical and geometrical parameters and distinct
resonant properties enables the development of high-
sensitive optoelectronic nanosensors for the analysis of
weak fluorescence signals, e.g. for biochemical and
diagnostic applications.
Acknowledgements
This work was supported by the Science and Technology
Center in Ukraine (project 6044 for 2015 to 2017).
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|
| id | nasplib_isofts_kiev_ua-123456789-121249 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T15:16:56Z |
| publishDate | 2015 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Chegel, V.I. Lytvyn, V.K. Lopatynskyi, A.M. Shepeliavyi, P.E. Lytvyn, O.S. Goltvyanskyi, Yu.V. 2017-06-13T17:47:37Z 2017-06-13T17:47:37Z 2015 Plasmon-enhanced fluorometry based on gold nanostructure arrays. Method and device / V.I. Chegel, V.K. Lytvyn, A.M. Lopatynskyi, P.E. Shepeliavyi, O.S. Lytvyn, Yu.V. Goltvyanskyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 272-278. — Бібліогр.: 37 назв. — англ. 1560-8034 DOI: 10.15407/spqeo18.03.272 PACS 33.50.Dq, 73.20.Mf https://nasplib.isofts.kiev.ua/handle/123456789/121249 In this work, we describe a method of surface-enhanced fluorometry, based on the phenomenon of localized surface plasmon resonance in unordered gold nanostructure arrays. The theoretical approach for the model system “gold nanoparticle-dielectric spacer” in the electrostatic approximation by solution of Laplace’s equation is considered. The developed technology for manufacturing the plasmonic substrates as well as design of the novel laser-based compact fluorometer are presented. The arrays of gold nanostructures on solid substrates (nanochips) coated with different thicknesses of SiO₂ were developed and fabricated by thermal annealing of gold island films with subsequent dielectric spacer deposition. As an example for verification of the proposed method, the fluorescence properties of the system “gold nanostructures array – SiO₂ dielectric coating – Rhodamine 6G” were studied. It has been shown that enhancement of dye emission up to 22 times for dielectric coating with the thickness of about 20 nm is possible. Presented method is of importance for the development of the novel nanoscale sensors, biomolecular assays and nanoplasmonic devices. This work was supported by the Science and Technology Center in Ukraine (project 6044 for 2015 to 2017). en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Plasmon-enhanced fluorometry based on gold nanostructure arrays. Method and device Article published earlier |
| spellingShingle | Plasmon-enhanced fluorometry based on gold nanostructure arrays. Method and device Chegel, V.I. Lytvyn, V.K. Lopatynskyi, A.M. Shepeliavyi, P.E. Lytvyn, O.S. Goltvyanskyi, Yu.V. |
| title | Plasmon-enhanced fluorometry based on gold nanostructure arrays. Method and device |
| title_full | Plasmon-enhanced fluorometry based on gold nanostructure arrays. Method and device |
| title_fullStr | Plasmon-enhanced fluorometry based on gold nanostructure arrays. Method and device |
| title_full_unstemmed | Plasmon-enhanced fluorometry based on gold nanostructure arrays. Method and device |
| title_short | Plasmon-enhanced fluorometry based on gold nanostructure arrays. Method and device |
| title_sort | plasmon-enhanced fluorometry based on gold nanostructure arrays. method and device |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121249 |
| work_keys_str_mv | AT chegelvi plasmonenhancedfluorometrybasedongoldnanostructurearraysmethodanddevice AT lytvynvk plasmonenhancedfluorometrybasedongoldnanostructurearraysmethodanddevice AT lopatynskyiam plasmonenhancedfluorometrybasedongoldnanostructurearraysmethodanddevice AT shepeliavyipe plasmonenhancedfluorometrybasedongoldnanostructurearraysmethodanddevice AT lytvynos plasmonenhancedfluorometrybasedongoldnanostructurearraysmethodanddevice AT goltvyanskyiyuv plasmonenhancedfluorometrybasedongoldnanostructurearraysmethodanddevice |