Structural and electrical-physical properties of the ohmic contacts based on palladium to n⁺ -n-n⁺⁺ -n⁺⁺⁺ -InP
Presented in this paper are experimental data on structural properties of contact metallization and temperature dependence of the specific contact resistance for ohmic contacts Au–Ti–Pd–n⁺-InP and Au–Ti–Ge–Pd-n⁺-InP prepared using the method of successive thermal evaporation of metals in oil-free va...
Saved in:
| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2015 |
| Main Authors: | Belyaev, A.E., Boltovets, N.A., Bobyl, A.B., Kladko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Nasyrov, M.U., Sachenko, A.V., Slipokurov, V.S., Slepova, A.S., Safryuk, N.V., Gudymenko, A.I., Shynkarenko, V.V. |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
|
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121259 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Structural and electrical-physical properties of the ohmic contacts based on palladium to n⁺ -n-n⁺⁺ -n⁺⁺⁺ -InP / A.E. Belyaev, N.A. Boltovets, A.B. Bobyl, V.P. Kladko, R.V. Konakova, Ya.Ya. Kudryk, M.U. Nasyrov, A.V. Sachenko, V.S. Slipokurov, A.S. Slepova, N.V. Safryuk, A.I. Gudymenko, V.V. Shynkarenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 391-395. — Бібліогр.: 18 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of UkraineSimilar Items
Structural and electrical-physical properties of the ohmic contacts based on palladium to n+-n-n++-n+++-InP
by: A. E. Belyaev, et al.
Published: (2015)
by: A. E. Belyaev, et al.
Published: (2015)
Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au–Ti–Pd–n⁺-n-n⁺-Si in IMPATT diodes
by: Romanets, P.M., et al.
Published: (2016)
by: Romanets, P.M., et al.
Published: (2016)
Temperature dependence of contact resistance of Au−Ti−Pd2Si−n⁺ -Si ohmic contacts
by: Belyaev, A.E., et al.
Published: (2010)
by: Belyaev, A.E., et al.
Published: (2010)
Features of the formation of ohmic contacts to n+-InN
by: P. O. Sai, et al.
Published: (2019)
by: P. O. Sai, et al.
Published: (2019)
Features of the formation of ohmic contacts to n+-InN
by: P. O. Sai, et al.
Published: (2019)
by: P. O. Sai, et al.
Published: (2019)
Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au–Ti–Pd–n+-n-n+-Si in IMPATT diodes
by: P. M. Romanets, et al.
Published: (2016)
by: P. M. Romanets, et al.
Published: (2016)
On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n⁺ -n doping step
by: Sachenko, A.V., et al.
Published: (2014)
by: Sachenko, A.V., et al.
Published: (2014)
Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity
by: Boltovets, M.S., et al.
Published: (2010)
by: Boltovets, M.S., et al.
Published: (2010)
Role of dislocations in formation of ohmic contacts to heavily doped n-Si
by: Belyaev, A.E., et al.
Published: (2013)
by: Belyaev, A.E., et al.
Published: (2013)
On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n+-n doping step
by: A. V. Sachenko, et al.
Published: (2014)
by: A. V. Sachenko, et al.
Published: (2014)
Effect of microwave radiation on I-V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN
by: Belyaev, A.E., et al.
Published: (2013)
by: Belyaev, A.E., et al.
Published: (2013)
Effect of microwave radiation on I V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN
by: A. E. Belyaev, et al.
Published: (2013)
by: A. E. Belyaev, et al.
Published: (2013)
Ohmic contacts based on Pd to indium phosphide Gunn diodes
by: Belyaev, A.E., et al.
Published: (2015)
by: Belyaev, A.E., et al.
Published: (2015)
Peculiarities of the study of Au-Ti-Pd-n⁺-n-n⁺-Si multilayer contact structure to avalanche transit-time diodes
by: Romanets, P.M., et al.
Published: (2019)
by: Romanets, P.M., et al.
Published: (2019)
Temperature dependence of contact resistance of Au Ti Pd2Si n+-Si ohmic contacts
by: A. E. Belyaev, et al.
Published: (2010)
by: A. E. Belyaev, et al.
Published: (2010)
Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity
by: M. S. Boltovets, et al.
Published: (2010)
by: M. S. Boltovets, et al.
Published: (2010)
Photoelectrical properties of p+-inp/n-ingaasp/n-inp double heterojunctions
by: S. I. Krukovskyi, et al.
Published: (2012)
by: S. I. Krukovskyi, et al.
Published: (2012)
Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures
by: Boltovets, N.S., et al.
Published: (2006)
by: Boltovets, N.S., et al.
Published: (2006)
Role of dislocations in formation of ohmic contacts to heavily doped n-Si
by: A. E. Belyaev, et al.
Published: (2013)
by: A. E. Belyaev, et al.
Published: (2013)
Investigation of resistance formation mechanisms for contacts to n-AlN and n-GaN with a high dislocation density
by: Sachenko, A.V., et al.
Published: (2012)
by: Sachenko, A.V., et al.
Published: (2012)
Peculiarities of study of Au–Ti–Pd–n+-n-n+-Si multilayer contact structure to avalanche transit-time diodes
by: P. M. Romanets, et al.
Published: (2019)
by: P. M. Romanets, et al.
Published: (2019)
Influence of parameters inherent to ohmic contacts on properties of microwave avalanche transit-time diodes
by: Kudryk, Ya.Ya., et al.
Published: (2019)
by: Kudryk, Ya.Ya., et al.
Published: (2019)
Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n+-GaN ohmic contacts
by: A. V. Sachenko, et al.
Published: (2013)
by: A. V. Sachenko, et al.
Published: (2013)
Resistance formation mechanisms for contacts and to n-AlN and n-GaN with a high dislocation density
by: A. V. Sachenko, et al.
Published: (2012)
by: A. V. Sachenko, et al.
Published: (2012)
Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n⁺ -GaN ohmic contacts
by: Sachenko, A.V., et al.
Published: (2013)
by: Sachenko, A.V., et al.
Published: (2013)
On the current flow mechanism in the Au-TiBx-n-GaN-i-Al₂O₃ Schottky barrier diodes
by: Belyaev, A.E., et al.
Published: (2007)
by: Belyaev, A.E., et al.
Published: (2007)
Properties of p+-InP/n-InGaAsP/n-InP double heterojunctions grown at different technological regimes
by: S. I. Krukovskyi, et al.
Published: (2011)
by: S. I. Krukovskyi, et al.
Published: (2011)
New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis
by: Arsentyev, I.N., et al.
Published: (2005)
by: Arsentyev, I.N., et al.
Published: (2005)
Method for data processing in application to ohmic contacts
by: Belyaev, A.E., et al.
Published: (2019)
by: Belyaev, A.E., et al.
Published: (2019)
Фотоелектричні властивості подвійних гетеропереходів p+-InP/n-InGaAsP/n-InP
by: Круковський, C.I., et al.
Published: (2012)
by: Круковський, C.I., et al.
Published: (2012)
X-ray diffraction study of deformation state in InGaN/GaN multilayered structures
by: V. P. Kladko, et al.
Published: (2010)
by: V. P. Kladko, et al.
Published: (2010)
X-ray diffraction study of deformation state in InGaN/GaN multilayered structures
by: Kladko, V.P., et al.
Published: (2010)
by: Kladko, V.P., et al.
Published: (2010)
Ohmic contacts based on Pd to indium phosphide Gunn diodes
by: A. E. Belyaev, et al.
Published: (2015)
by: A. E. Belyaev, et al.
Published: (2015)
Свойства двойных гетеропереходов p+-InP/n-InGaAsP/n-InP, изготовленных методом жидкофазной эпитаксии
by: Vakiv, N. M., et al.
Published: (2012)
by: Vakiv, N. M., et al.
Published: (2012)
Radiation-stimulated processes in silicon structures with contacts based on TiN
by: Nasyrov, M.U., et al.
Published: (2015)
by: Nasyrov, M.U., et al.
Published: (2015)
Radiation-stimulated processes in silicon structures with contacts based on TiN
by: Nasyrov, M.U., et al.
Published: (2015)
by: Nasyrov, M.U., et al.
Published: (2015)
Method for data processing in application to ohmic contacts
by: A. E. Belyaev, et al.
Published: (2019)
by: A. E. Belyaev, et al.
Published: (2019)
Свойства двойных гетеропереходов p⁺-InP/n-InGaAsP/n-InP, изготовленных методом жидкофазной эпитаксии
by: Вакив, Н.М., et al.
Published: (2012)
by: Вакив, Н.М., et al.
Published: (2012)
Heat-resistant barrier and ohmic contacts based on TiBx and ZrBx interstitial phases to microwave diode structures
by: Belyaev, A.E., et al.
Published: (2008)
by: Belyaev, A.E., et al.
Published: (2008)
Ohmic contacts to InN-based materials
by: Sai, P.O.
Published: (2016)
by: Sai, P.O.
Published: (2016)
Similar Items
-
Structural and electrical-physical properties of the ohmic contacts based on palladium to n+-n-n++-n+++-InP
by: A. E. Belyaev, et al.
Published: (2015) -
Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au–Ti–Pd–n⁺-n-n⁺-Si in IMPATT diodes
by: Romanets, P.M., et al.
Published: (2016) -
Temperature dependence of contact resistance of Au−Ti−Pd2Si−n⁺ -Si ohmic contacts
by: Belyaev, A.E., et al.
Published: (2010) -
Features of the formation of ohmic contacts to n+-InN
by: P. O. Sai, et al.
Published: (2019) -
Features of the formation of ohmic contacts to n+-InN
by: P. O. Sai, et al.
Published: (2019)