On a doped transition layer in the space charge region of Schottky contact
A technique is proposed for estimation of maximal thickness of a doped semiconductor transition layer in a Schottky contact. It is based on taking spectral curves of transverse photovoltage. It is shown that in gallium arsenide crystal with starting impurity concentration of 10¹⁶ cm-³, a layer with...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2002 |
| Main Author: | |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121338 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | On a doped transition layer in the space charge region of Schottky contact / L.V. Shekhovtsov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 403-405. — Бібліогр.: 8 назв. — англ. |