On a doped transition layer in the space charge region of Schottky contact

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2002
• Main Author: Shekhovtsov, L.V.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2002
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/121338
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: On a doped transition layer in the space charge region of Schottky contact / L.V. Shekhovtsov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 403-405. — Бібліогр.: 8 назв. — англ.

A technique is proposed for estimation of maximal thickness of a doped semiconductor transition layer in a Schottky contact. It is based on taking spectral curves of transverse photovoltage. It is shown that in gallium arsenide crystal with starting impurity concentration of 10¹⁶ cm-³, a layer with doping level of 10¹⁷ cm-³ and maximal thickness of 4 nm may exist in the space-charge region near the interface of the TiB₂-GaAs structure. At impurity concentration in the transition layer about and over 101¹⁸ cm-³, its thickness goes down, and it shows up as individual inclusions in the GaAs lattice. The total area of such inclusions at the metal-semiconductor interface does not exceed 1 % that of contact. In actual structures the transition layer is a superposition of layers and inclusions, with impurity concentration of 10¹⁷ cm-³ or more and thickness below 4 nm.