On a doped transition layer in the space charge region of Schottky contact
A technique is proposed for estimation of maximal thickness of a doped semiconductor transition layer in a Schottky contact. It is based on taking spectral curves of transverse photovoltage. It is shown that in gallium arsenide crystal with starting impurity concentration of 10¹⁶ cm-³, a layer with...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2002 |
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| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121338 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | On a doped transition layer in the space charge region of Schottky contact / L.V. Shekhovtsov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 403-405. — Бібліогр.: 8 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862732184321785856 |
|---|---|
| author | Shekhovtsov, L.V. |
| author_facet | Shekhovtsov, L.V. |
| citation_txt | On a doped transition layer in the space charge region of Schottky contact / L.V. Shekhovtsov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 403-405. — Бібліогр.: 8 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | A technique is proposed for estimation of maximal thickness of a doped semiconductor transition layer in a Schottky contact. It is based on taking spectral curves of transverse photovoltage. It is shown that in gallium arsenide crystal with starting impurity concentration of 10¹⁶ cm-³, a layer with doping level of 10¹⁷ cm-³ and maximal thickness of 4 nm may exist in the space-charge region near the interface of the TiB₂-GaAs structure. At impurity concentration in the transition layer about and over 101¹⁸ cm-³, its thickness goes down, and it shows up as individual inclusions in the GaAs lattice. The total area of such inclusions at the metal-semiconductor interface does not exceed 1 % that of contact. In actual structures the transition layer is a superposition of layers and inclusions, with impurity concentration of 10¹⁷ cm-³ or more and thickness below 4 nm.
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| first_indexed | 2025-12-07T19:30:22Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-121338 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T19:30:22Z |
| publishDate | 2002 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Shekhovtsov, L.V. 2017-06-14T07:37:08Z 2017-06-14T07:37:08Z 2002 On a doped transition layer in the space charge region of Schottky contact / L.V. Shekhovtsov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 403-405. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS: 73.30.+y https://nasplib.isofts.kiev.ua/handle/123456789/121338 A technique is proposed for estimation of maximal thickness of a doped semiconductor transition layer in a Schottky contact. It is based on taking spectral curves of transverse photovoltage. It is shown that in gallium arsenide crystal with starting impurity concentration of 10¹⁶ cm-³, a layer with doping level of 10¹⁷ cm-³ and maximal thickness of 4 nm may exist in the space-charge region near the interface of the TiB₂-GaAs structure. At impurity concentration in the transition layer about and over 101¹⁸ cm-³, its thickness goes down, and it shows up as individual inclusions in the GaAs lattice. The total area of such inclusions at the metal-semiconductor interface does not exceed 1 % that of contact. In actual structures the transition layer is a superposition of layers and inclusions, with impurity concentration of 10¹⁷ cm-³ or more and thickness below 4 nm. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics On a doped transition layer in the space charge region of Schottky contact Article published earlier |
| spellingShingle | On a doped transition layer in the space charge region of Schottky contact Shekhovtsov, L.V. |
| title | On a doped transition layer in the space charge region of Schottky contact |
| title_full | On a doped transition layer in the space charge region of Schottky contact |
| title_fullStr | On a doped transition layer in the space charge region of Schottky contact |
| title_full_unstemmed | On a doped transition layer in the space charge region of Schottky contact |
| title_short | On a doped transition layer in the space charge region of Schottky contact |
| title_sort | on a doped transition layer in the space charge region of schottky contact |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121338 |
| work_keys_str_mv | AT shekhovtsovlv onadopedtransitionlayerinthespacechargeregionofschottkycontact |