On a doped transition layer in the space charge region of Schottky contact
A technique is proposed for estimation of maximal thickness of a doped semiconductor transition layer in a Schottky contact. It is based on taking spectral curves of transverse photovoltage. It is shown that in gallium arsenide crystal with starting impurity concentration of 10¹⁶ cm-³, a layer with...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2002 |
| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/121338 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | On a doped transition layer in the space charge region of Schottky contact / L.V. Shekhovtsov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 403-405. — Бібліогр.: 8 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-121338 |
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Shekhovtsov, L.V. 2017-06-14T07:37:08Z 2017-06-14T07:37:08Z 2002 On a doped transition layer in the space charge region of Schottky contact / L.V. Shekhovtsov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 403-405. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS: 73.30.+y https://nasplib.isofts.kiev.ua/handle/123456789/121338 A technique is proposed for estimation of maximal thickness of a doped semiconductor transition layer in a Schottky contact. It is based on taking spectral curves of transverse photovoltage. It is shown that in gallium arsenide crystal with starting impurity concentration of 10¹⁶ cm-³, a layer with doping level of 10¹⁷ cm-³ and maximal thickness of 4 nm may exist in the space-charge region near the interface of the TiB₂-GaAs structure. At impurity concentration in the transition layer about and over 101¹⁸ cm-³, its thickness goes down, and it shows up as individual inclusions in the GaAs lattice. The total area of such inclusions at the metal-semiconductor interface does not exceed 1 % that of contact. In actual structures the transition layer is a superposition of layers and inclusions, with impurity concentration of 10¹⁷ cm-³ or more and thickness below 4 nm. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics On a doped transition layer in the space charge region of Schottky contact Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
On a doped transition layer in the space charge region of Schottky contact |
| spellingShingle |
On a doped transition layer in the space charge region of Schottky contact Shekhovtsov, L.V. |
| title_short |
On a doped transition layer in the space charge region of Schottky contact |
| title_full |
On a doped transition layer in the space charge region of Schottky contact |
| title_fullStr |
On a doped transition layer in the space charge region of Schottky contact |
| title_full_unstemmed |
On a doped transition layer in the space charge region of Schottky contact |
| title_sort |
on a doped transition layer in the space charge region of schottky contact |
| author |
Shekhovtsov, L.V. |
| author_facet |
Shekhovtsov, L.V. |
| publishDate |
2002 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
A technique is proposed for estimation of maximal thickness of a doped semiconductor transition layer in a Schottky contact. It is based on taking spectral curves of transverse photovoltage. It is shown that in gallium arsenide crystal with starting impurity concentration of 10¹⁶ cm-³, a layer with doping level of 10¹⁷ cm-³ and maximal thickness of 4 nm may exist in the space-charge region near the interface of the TiB₂-GaAs structure. At impurity concentration in the transition layer about and over 101¹⁸ cm-³, its thickness goes down, and it shows up as individual inclusions in the GaAs lattice. The total area of such inclusions at the metal-semiconductor interface does not exceed 1 % that of contact. In actual structures the transition layer is a superposition of layers and inclusions, with impurity concentration of 10¹⁷ cm-³ or more and thickness below 4 nm.
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| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/121338 |
| citation_txt |
On a doped transition layer in the space charge region of Schottky contact / L.V. Shekhovtsov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 403-405. — Бібліогр.: 8 назв. — англ. |
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2025-12-07T19:30:22Z |
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