Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation
An investigation of radiation effect on edgeless accumulation mode (AM) p-channel and fully-depleted enhancement mode (EM) n-channel MOSFETs, fabricated on UNIBOND silicon on insulatior wafers (SOI), is presented in the paper. Characterization of trapped charge in the gate and buried oxides of the...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2006 |
| Main Authors: | , , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121436 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation / Y. Houk, A.N. Nazarov, V.I. Turchanikov, V.S. Lysenko, S. Andriaensen, D. Flandre // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 69-74. — Бібліогр.: 7 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862720098407546880 |
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| author | Houk, Y. Nazarov, A.N. Turchanikov, V.I. Lysenko, V.S. Andriaensen, S. Flandre, D. |
| author_facet | Houk, Y. Nazarov, A.N. Turchanikov, V.I. Lysenko, V.S. Andriaensen, S. Flandre, D. |
| citation_txt | Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation / Y. Houk, A.N. Nazarov, V.I. Turchanikov, V.S. Lysenko, S. Andriaensen, D. Flandre // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 69-74. — Бібліогр.: 7 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | An investigation of radiation effect on edgeless accumulation mode (AM) p-channel and fully-depleted enhancement mode (EM) n-channel MOSFETs, fabricated on UNIBOND silicon on insulatior wafers (SOI), is presented in the paper. Characterization of trapped charge in the gate and buried oxides of the devices was performed by measuring only the front-gate transistors. It was revealed that the irradiation effect on EM n-MOSFET is stronger than that on AM p-MOSFET. Radiation-induced positive charge in the buried oxide proved to invert back interface what causes back channel creation in EM n-MOSFET but no such effect in AM p-MOSFET has been not observed. The effect of improving the quality of both interfaces for small irradiation doses is demonstrated.
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| first_indexed | 2025-12-07T18:23:40Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-121436 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T18:23:40Z |
| publishDate | 2006 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Houk, Y. Nazarov, A.N. Turchanikov, V.I. Lysenko, V.S. Andriaensen, S. Flandre, D. 2017-06-14T10:55:39Z 2017-06-14T10:55:39Z 2006 Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation / Y. Houk, A.N. Nazarov, V.I. Turchanikov, V.S. Lysenko, S. Andriaensen, D. Flandre // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 69-74. — Бібліогр.: 7 назв. — англ. 1560-8034 PACS 85.30.Tv, 85.30.De, 81.40.Wx https://nasplib.isofts.kiev.ua/handle/123456789/121436 An investigation of radiation effect on edgeless accumulation mode (AM) p-channel and fully-depleted enhancement mode (EM) n-channel MOSFETs, fabricated on UNIBOND silicon on insulatior wafers (SOI), is presented in the paper. Characterization of trapped charge in the gate and buried oxides of the devices was performed by measuring only the front-gate transistors. It was revealed that the irradiation effect on EM n-MOSFET is stronger than that on AM p-MOSFET. Radiation-induced positive charge in the buried oxide proved to invert back interface what causes back channel creation in EM n-MOSFET but no such effect in AM p-MOSFET has been not observed. The effect of improving the quality of both interfaces for small irradiation doses is demonstrated. The authors thank the technical staff of the UCL
 Microelectronics Lab for device fabrication. This work
 has been supported by STCU project No 2332. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation Article published earlier |
| spellingShingle | Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation Houk, Y. Nazarov, A.N. Turchanikov, V.I. Lysenko, V.S. Andriaensen, S. Flandre, D. |
| title | Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation |
| title_full | Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation |
| title_fullStr | Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation |
| title_full_unstemmed | Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation |
| title_short | Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation |
| title_sort | characterization of charge trapping processes in fully-depleted unibond soi mosfet subjected to γ-irradiation |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121436 |
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