Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation

Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation

An investigation of radiation effect on edgeless accumulation mode (AM) p-channel and fully-depleted enhancement mode (EM) n-channel MOSFETs, fabricated on UNIBOND silicon on insulatior wafers (SOI), is presented in the paper. Characterization of trapped charge in the gate and buried oxides of the...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2006
Hauptverfasser: Houk, Y., Nazarov, A.N., Turchanikov, V.I., Lysenko, V.S., Andriaensen, S., Flandre, D.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/121436
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Zitieren:Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation / Y. Houk, A.N. Nazarov, V.I. Turchanikov, V.S. Lysenko, S. Andriaensen, D. Flandre // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 69-74. — Бібліогр.: 7 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-121436
record_format dspace
spelling Houk, Y.
Nazarov, A.N.
Turchanikov, V.I.
Lysenko, V.S.
Andriaensen, S.
Flandre, D.
2017-06-14T10:55:39Z
2017-06-14T10:55:39Z
2006
Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation / Y. Houk, A.N. Nazarov, V.I. Turchanikov, V.S. Lysenko, S. Andriaensen, D. Flandre // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 69-74. — Бібліогр.: 7 назв. — англ.
1560-8034
PACS 85.30.Tv, 85.30.De, 81.40.Wx
https://nasplib.isofts.kiev.ua/handle/123456789/121436
An investigation of radiation effect on edgeless accumulation mode (AM) p-channel and fully-depleted enhancement mode (EM) n-channel MOSFETs, fabricated on UNIBOND silicon on insulatior wafers (SOI), is presented in the paper. Characterization of trapped charge in the gate and buried oxides of the devices was performed by measuring only the front-gate transistors. It was revealed that the irradiation effect on EM n-MOSFET is stronger than that on AM p-MOSFET. Radiation-induced positive charge in the buried oxide proved to invert back interface what causes back channel creation in EM n-MOSFET but no such effect in AM p-MOSFET has been not observed. The effect of improving the quality of both interfaces for small irradiation doses is demonstrated.
The authors thank the technical staff of the UCL Microelectronics Lab for device fabrication. This work has been supported by STCU project No 2332.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation
spellingShingle Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation
Houk, Y.
Nazarov, A.N.
Turchanikov, V.I.
Lysenko, V.S.
Andriaensen, S.
Flandre, D.
title_short Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation
title_full Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation
title_fullStr Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation
title_full_unstemmed Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation
title_sort characterization of charge trapping processes in fully-depleted unibond soi mosfet subjected to γ-irradiation
author Houk, Y.
Nazarov, A.N.
Turchanikov, V.I.
Lysenko, V.S.
Andriaensen, S.
Flandre, D.
author_facet Houk, Y.
Nazarov, A.N.
Turchanikov, V.I.
Lysenko, V.S.
Andriaensen, S.
Flandre, D.
publishDate 2006
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description An investigation of radiation effect on edgeless accumulation mode (AM) p-channel and fully-depleted enhancement mode (EM) n-channel MOSFETs, fabricated on UNIBOND silicon on insulatior wafers (SOI), is presented in the paper. Characterization of trapped charge in the gate and buried oxides of the devices was performed by measuring only the front-gate transistors. It was revealed that the irradiation effect on EM n-MOSFET is stronger than that on AM p-MOSFET. Radiation-induced positive charge in the buried oxide proved to invert back interface what causes back channel creation in EM n-MOSFET but no such effect in AM p-MOSFET has been not observed. The effect of improving the quality of both interfaces for small irradiation doses is demonstrated.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/121436
citation_txt Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation / Y. Houk, A.N. Nazarov, V.I. Turchanikov, V.S. Lysenko, S. Andriaensen, D. Flandre // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 69-74. — Бібліогр.: 7 назв. — англ.
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AT nazarovan characterizationofchargetrappingprocessesinfullydepletedunibondsoimosfetsubjectedtoγirradiation
AT turchanikovvi characterizationofchargetrappingprocessesinfullydepletedunibondsoimosfetsubjectedtoγirradiation
AT lysenkovs characterizationofchargetrappingprocessesinfullydepletedunibondsoimosfetsubjectedtoγirradiation
AT andriaensens characterizationofchargetrappingprocessesinfullydepletedunibondsoimosfetsubjectedtoγirradiation
AT flandred characterizationofchargetrappingprocessesinfullydepletedunibondsoimosfetsubjectedtoγirradiation
first_indexed 2025-12-07T18:23:40Z
last_indexed 2025-12-07T18:23:40Z
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