p-n junctions obtained in (Ge₂)x(GaAs)₁₋x varizone solid solutions by liquid phase epitaxy
(Ge₂)x(GaAs)₁₋x graded gap layers were grown using the method of liquid phase epitaxy on GaAs substrates. Investigated are distributions of chemical components along the thickness of the epitaxial layer. In accord to the scan patterns obtained in characteristic X-rays, the layers have a perfect stru...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2005 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2005
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/121540 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | p-n junctions obtained in (Ge₂)x(GaAs)₁₋x varizone solid solutions by liquid phase epitaxy / AUTHORS // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 33-34. — Бібліогр.: 2 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862552752346890240 |
|---|---|
| author | Sapaev, B. Saidov, A.S. Sapaev, I.B. |
| author_facet | Sapaev, B. Saidov, A.S. Sapaev, I.B. |
| citation_txt | p-n junctions obtained in (Ge₂)x(GaAs)₁₋x varizone solid solutions by liquid phase epitaxy / AUTHORS // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 33-34. — Бібліогр.: 2 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | (Ge₂)x(GaAs)₁₋x graded gap layers were grown using the method of liquid phase epitaxy on GaAs substrates. Investigated are distributions of chemical components along the thickness of the epitaxial layer. In accord to the scan patterns obtained in characteristic X-rays, the layers have a perfect structure, and the component distributions both along the thickness and the interface are rather monotonous, macroscopic defects and metal inclusions are absent. In the epitaxial layers, we created p-n junctions by diffusion of Zn from a gas phase. We studied the possibilities of using the GaAs-(Ge₂)x(GaAs)₁−x structures as solar converters including the near infra-red region. In this case, the GaAs substrate serves as a filter for light quanta with the energy hν < EgGaAs. The conversion efficiency dependences on the gradient x and the p-n junction position inside the (Ge₂)x(GaAs)₁−x graded gap layer are also shown.
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| first_indexed | 2025-11-25T21:02:32Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121540 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-25T21:02:32Z |
| publishDate | 2005 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Sapaev, B. Saidov, A.S. Sapaev, I.B. 2017-06-14T16:02:06Z 2017-06-14T16:02:06Z 2005 p-n junctions obtained in (Ge₂)x(GaAs)₁₋x varizone solid solutions by liquid phase epitaxy / AUTHORS // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 33-34. — Бібліогр.: 2 назв. — англ. 1560-8034 PACS 68.55.Ac, 81.15.-z https://nasplib.isofts.kiev.ua/handle/123456789/121540 (Ge₂)x(GaAs)₁₋x graded gap layers were grown using the method of liquid phase epitaxy on GaAs substrates. Investigated are distributions of chemical components along the thickness of the epitaxial layer. In accord to the scan patterns obtained in characteristic X-rays, the layers have a perfect structure, and the component distributions both along the thickness and the interface are rather monotonous, macroscopic defects and metal inclusions are absent. In the epitaxial layers, we created p-n junctions by diffusion of Zn from a gas phase. We studied the possibilities of using the GaAs-(Ge₂)x(GaAs)₁−x structures as solar converters including the near infra-red region. In this case, the GaAs substrate serves as a filter for light quanta with the energy hν < EgGaAs. The conversion efficiency dependences on the gradient x and the p-n junction position inside the (Ge₂)x(GaAs)₁−x graded gap layer are also shown. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics p-n junctions obtained in (Ge₂)x(GaAs)₁₋x varizone solid solutions by liquid phase epitaxy Article published earlier |
| spellingShingle | p-n junctions obtained in (Ge₂)x(GaAs)₁₋x varizone solid solutions by liquid phase epitaxy Sapaev, B. Saidov, A.S. Sapaev, I.B. |
| title | p-n junctions obtained in (Ge₂)x(GaAs)₁₋x varizone solid solutions by liquid phase epitaxy |
| title_full | p-n junctions obtained in (Ge₂)x(GaAs)₁₋x varizone solid solutions by liquid phase epitaxy |
| title_fullStr | p-n junctions obtained in (Ge₂)x(GaAs)₁₋x varizone solid solutions by liquid phase epitaxy |
| title_full_unstemmed | p-n junctions obtained in (Ge₂)x(GaAs)₁₋x varizone solid solutions by liquid phase epitaxy |
| title_short | p-n junctions obtained in (Ge₂)x(GaAs)₁₋x varizone solid solutions by liquid phase epitaxy |
| title_sort | p-n junctions obtained in (ge₂)x(gaas)₁₋x varizone solid solutions by liquid phase epitaxy |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121540 |
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